Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall

Patent metadata

Field	Value
Publication number	US-9502056-B1
Application number	US-201615082992-A
Country	US
Kind code	B1
Filing date	Mar 28, 2016
Priority date	Mar 28, 2016
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.

First claim

What is claimed is:

1. A magnetoresistance element comprising:
a stack having at least one sidewall; and
at least one insulating layer in contact with the at least one sidewall, wherein
the stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first ferromagnetic layer and the second ferromagnetic layer,
the tunnel barrier layer has at least one end face located in the at least one sidewall of the stack,
the at least one insulating layer includes: an island-like structure section in contact with only a part of the at least one sidewall; and a coating section covering the island-like structure section and the at least one sidewall,
the tunnel barrier layer contains a first oxide,
the island-like structure section contains a second oxide,
the coating section contains a third oxide, and
G2−G1 is greater than 0 (kJ/mol)) and smaller than or equal to 435 (kJ/mol), G2−G3 is greater than 0 (kJ/mol) and smaller than or equal to 435 (kJ/mol), and G3−G1 is smaller than or equal to 435 (kJ/mol), where G1 (kJ/mol), G2 (kJ/mol) and G3 (kJ/mol) represent standard Gibbs energies of formation at 280° C. of the first oxide, the second oxide and the third oxide, respectively.

2. The magnetoresistance element according to claim 1 , wherein the first ferromagnetic layer is a free layer whose magnetization direction changes in response to an external magnetic field, and the second ferromagnetic layer is a pinned layer whose magnetization direction is pinned.

3. A thin-film magnetic head comprising:
a medium facing surface to face a recording medium; and
the magnetoresistance element of claim 1 ,
wherein the magnetoresistance element is configured to detect a signal magnetic field from the recording medium.

4. The thin-film magnetic head according to claim 3 , further comprising:
first and second electrodes for feeding the magnetoresistance element a current for detecting a signal corresponding to the signal magnetic field; and
first and second bias magnetic field applying layers for applying a bias magnetic field to the magnetoresistance element, wherein
the first and second electrodes are located on opposite sides of the stack in a direction in which the first ferromagnetic layer, the tunnel barrier layer and the second ferromagnetic layer are stacked,
the at least one sidewall of the stack is a first sidewall and a second sidewall located at opposite ends of at least part of the stack in a track width direction,
the at least one end face of the tunnel barrier layer is a first end face and a second end face located in the first sidewall and the second sidewall, respectively,
the at least one insulating layer is a first insulating layer and a second insulating layer in contact with the first sidewall and the second sidewall, respectively,
the first and second bias magnetic field applying layers are located on opposite sides of the at least part of the stack in the track width direction,
at least part of the first insulating layer is interposed between the first sidewall and the first bias magnetic field applying layer, and
at least part of the second insulating layer is interposed between the second sidewall and the second bias magnetic field applying layer.

5. A head assembly comprising:
a slider disposed to face a recording medium; and
a supporter flexibly supporting the slider, wherein
the slider includes a thin-film magnetic head,
the thin-film magnetic head includes: a medium facing surface to face the recording medium; and the magnetoresistance element of claim 1 , and
the magnetoresistance element is configured to detect a signal magnetic field from the recording medium.

6. A magnetic recording device comprising:
a recording medium;
a thin-film magnetic head; and
a positioning device supporting the thin-film magnetic head and positioning the thin-film magnetic head with respect to the recording medium, wherein
the thin-film magnetic head includes: a medium facing surface facing the recording medium; and the magnetoresistance element of claim 1 , and
the magnetoresistance element is configured to detect a signal magnetic field from the recording medium.

Assignees

• Tdk Corp

Inventors

• Kojima Hidekazu
• Kanaya Takayasu
• Ukita Hideyuki
• Ota Minoru
• Honma Kohei

Classifications

• G01R33/09

  Magnetoresistive devices · CPC title

• G11B5/3906 Primary

  Details related to the use of magnetic thin film layers or to their effects · CPC title

• G11B5/39

  using magneto-resistive devices {or effects} · CPC title

• G11B5/3932

  Magnetic biasing films · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title