Magnetic head having a magnetoresistive junction and side oxide layers

US9030784B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9030784-B2
Application numberUS-201313848353-A
CountryUS
Kind codeB2
Filing dateMar 21, 2013
Priority dateJun 26, 2008
Publication dateMay 12, 2015
Grant dateMay 12, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A magnetic head including a magnetoresistive junction and an oxide layer. The magnetoresistive junction includes a pinned layer, a free layer, and a barrier layer residing between the pinned and free layer. The magnetoresistive junction includes at least one side having a smooth profile. The oxide layer is on the at least one side. The oxide layer is less than one nanometer thick at the free layer.

First claim

Opening claim text (preview).

We claim: 1. A magnetic head comprising: a magnetoresistive junction including a pinned layer, a free layer, and a barrier layer residing between the pinned and free layer, the magnetoresistive junction including at least one side having a smooth profile; and an oxide layer on the at least one side, the oxide layer being less than one nanometer and greater than zero nanometers thick at the free layer; wherein the oxide layer consists of a single natural oxide layer, the single natural oxide layer being a natural oxide of the magnetoresistive junction. 2. The magnetic head of claim 1 wherein the magnetoresistive junction has a track width of not more than sixty nanometers. 3. The magnetic head of claim 2 wherein the track width is not more than fifty nanometers. 4. The magnetic head of claim 1 wherein the at least one side has a junction angle of at least forty and not more than eighty degrees. 5. A disk drive including a magnetic head comprising: a magnetoresistive junction including a pinned layer, a free layer, and a barrier layer residing between the pinned and free layer, the magnetoresistive junction including at least one side having a smooth profile; and an oxide layer on the at least one side, the oxide layer being less than one nanometer and greater than zero nanometers thick at the free layer; wherein the oxide layer consists of a single natural oxide layer, the single natural oxide layer being a natural oxide of the magnetoresistive junction.

Assignees

Inventors

Classifications

  • with etching or machining of magnetic material · CPC title

  • G11B5/3906Primary

    Details related to the use of magnetic thin film layers or to their effects · CPC title

  • G11B5/3909Primary

    Arrangements using a magnetic tunnel junction · CPC title

  • having tunnel junction effect · CPC title

  • Specially shaped layers · CPC title

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What does patent US9030784B2 cover?
A magnetic head including a magnetoresistive junction and an oxide layer. The magnetoresistive junction includes a pinned layer, a free layer, and a barrier layer residing between the pinned and free layer. The magnetoresistive junction includes at least one side having a smooth profile. The oxide layer is on the at least one side. The oxide layer is less than one nanometer thick at the free la…
Who is the assignee on this patent?
Western Digital Fremont Llc
What technology area does this patent fall under?
Primary CPC classification G11B5/3906. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 12 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).