Method of manufacturing device substrate and display device manufactured using the same

Patent metadata

Field	Value
Publication number	US-9500890-B2
Application number	US-201414300397-A
Country	US
Kind code	B2
Filing date	Jun 10, 2014
Priority date	Nov 15, 2013
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

The method of manufacturing a device substrate includes forming a surface modifying layer on a process substrate. The surface modifying layer has a different hydrophobicity from that of the process substrate. The process substrate is disposed on a carrier substrate. The surface modifying layer is disposed between the process substrate and the carrier substrate. A device is formed on the process substrate. The process substrate is separated from the carrier substrate.

First claim

What is claimed is:

1. A method of manufacturing a device substrate, the method comprising:
forming a surface modifying layer on a process substrate, wherein the surface modifying layer has a hydrophobicity different from a hydrophobicity of the process substrate;
disposing the process substrate on a carrier substrate, wherein the surface modifying layer is disposed between the process substrate and the carrier substrate;
forming a device on the process substrate; and
separating the process substrate from the carrier substrate,

wherein the surface modifying layer comprises a first layer which includes a first material and a second layer which is disposed between the first layer and the process substrate, and the second layer includes a second material different from the first material.

2. The method of claim 1 , wherein the hydrophobicity of the first and second materials is greater than the hydrophobicity of the process substrate.

3. The method of claim 2 , wherein the surface modifying layer comprises a silane compound.

4. The method of claim 3 , wherein the silane compound includes hexamethyldisiloxane (HMDS).

5. The method of claim 3 , wherein forming the surface modifying layer comprises:
forming a silane compound layer comprising a self-assembled monolayer on the process substrate; and
cleaning the process substrate.

6. The method of claim 2 , further comprising removing a portion of the surface modifying layer.

7. The method of claim 6 , wherein the portion of the surface modifying layer is removed by an etching process or a grinding process.

8. The method of claim 1 , wherein the surface modifying layer is disposed on at least a portion of the process substrate when viewed from a plan view, and
wherein the process substrate comprises a first region on which the surface modifying layer is disposed and a second region on which the surface modifying layer is not disposed.

9. The method of claim 8 , wherein the second region is disposed along an edge of the process substrate.

10. The method of claim 8 , wherein the first region is disposed on a portion of an edge of the process substrate.

11. The method of claim 8 , wherein the first region passes through a center of the process substrate and extends in a direction parallel to a side of the process substrate.

12. A method of manufacturing a device substrate, the method comprising:
forming a surface modifying layer on a process substrate, wherein the surface modifying layer has a hydrophobicity different from a hydrophobicity of the process substrate;
disposing the process substrate on a carrier substrate, wherein the surface modifying layer is disposed between the process substrate and the carrier substrate;
forming a device on the process substrate; and
separating the process substrate from the carrier substrate,
wherein the hydrophobicity of the surface modifying layer is greater than the hydrophobicity of the process substrate, and
wherein the surface modifying layer includes a metal oxide.

13. The method of claim 12 , wherein the metal oxide includes indium-zinc oxide (IZO), indium-tin oxide (ITO), indium-tin-zinc oxide (ITZO), or germanium-zinc oxide (GZO).

14. A method of manufacturing a device substrate, the method comprising:
forming a surface modifying layer on a process substrate, wherein the surface modifying layer has a hydrophobicity different from a hydrophobicity of the process substrate;
disposing the process substrate on a carrier substrate, wherein the surface modifying layer is disposed between the process substrate and the carrier substrate;
forming a device on the process substrate; and
separating the process substrate from the carrier substrate,
wherein the hydrophobicity of the surface modifying layer is greater than the hydrophobicity of the process substrate, and
wherein the surface modifying layer comprises:
a silane compound layer disposed on the process substrate, wherein the silane compound layer includes a silane compound; and
a metal oxide layer disposed between the process substrate and the silane compound layer, wherein the metal oxide layer includes a metal oxide.

15. The method of claim 14 , wherein the silane compound includes hexamethyldisiloxane (HMDS).

16. The method of claim 14 , wherein the metal oxide includes indium-zinc oxide (IZO), indium-tin oxide (ITO), indium-tin-zinc oxide (ITZO), or germanium-zinc oxide (GZO).

17. A method of manufacturing a device substrate, the method comprising:
forming a surface modifying layer on a process substrate, wherein a hydrophobicity of the surface modifying layer is greater than a hydrophobicity of the process substrate, and wherein the surface modifying layer comprises a silane compound layer comprising a silane compound disposed on the process substrate, and a metal oxide layer comprising a metal oxide disposed between the process substrate and the silane compound layer;
disposing the process substrate on a carrier substrate, wherein the surface modifying layer is disposed between the process substrate and the carrier substrate;
forming a device on the process substrate; and
separating the process substrate from the carrier substrate.

18. The method of claim 17 , wherein the silane compound includes hexamethyldisiloxane (HMDS).

19. The method of claim 17 , wherein the metal oxide includes indium-zinc oxide (IZO), indium-tin oxide (ITO), indium-tin-zinc oxide (ITZO), or germanium-zinc oxide (GZO).

20. The method of claim 17 , wherein forming the surface modifying layer comprises:
forming a self-assembled monolayer on the process substrate; and
cleaning the process substrate.

21. The method of claim 17 , wherein the process substrate comprises a first region on which the surface modifying layer is disposed and a second region on which the surface modifying layer is not disposed.

22. The method of claim 21 , wherein the second region is disposed along an edge of the process substrate.

23. The method of claim 21 , wherein the first region is disposed on a portion of an edge of the process substrate.

24. The method of claim 21 , wherein the first region passes through a center of the process substrate and extends in a direction parallel to a side of the process substrate.

25. The method of claim 17 , further comprising removing a portion of the surface modifying layer.

26. The method of claim 25 , wherein the portion of the surface modifying layer is removed by an etching process or a grinding process.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Taehwan
• Kim Myeonghee
• Kim Youngbae
• Kim Jong Seong
• Park Myunghwan
• Lee Jonghwan

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1906

  Preparing SOI wafers · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/65

  characterised by treatments performed before or after the formation of the materials · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title