Negative resist composition, method of forming resist pattern and complex

US9499646B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9499646-B2
Application numberUS-201615153044-A
CountryUS
Kind codeB2
Filing dateMay 12, 2016
Priority dateDec 5, 2013
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. [MX n Y 4-n ]  (1)

First claim

Opening claim text (preview).

What is claimed is: 1. A complex which is represented by the following general formula (1): [MX n Y 4-n ]  (1) wherein M represents hafnium or zirconium, X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant pKa of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. 2. The complex according to claim 1 , wherein the acid dissociation constant pKa of the acid is 2.8 or less. 3. The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base represented by general formula (2) shown below: R 1 —Y 1 —SO 3 ⊖   (2) wherein R 1 represents a polymerizable group having a group selected from groups (X-01) to (X-07) shown below, and Y 1 represents a divalent linking group or a single bond; wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Ar represents an aromatic hydrocarbon group, n represents an integer of 0 to 2, and * represents a valence bond. 4. The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base selected from the group consisting of a conjugate base of 3-(methacryloyloxy)-1-propanesulfonic acid, a conjugate base of 3-(acryloyloxy)-1-propanesulfonic acid, a conjugated base of vinylsulfonic acid, and a conjugated base of styrenesulfonic acid. 5. The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base represented by general formula (3) shown below: R 2 —Y 2 —COO ⊖   (3) wherein, in formula (3), R 2 represents a polymerizable group having a group selected from (X-01) to (X-07) shown below, and Y 2 represents a divalent linking group or a single bond: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Ar represents an aromatic hydrocarbon group, n represents an integer of 0 to 2, and * represents a valence bond. 6. The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base selected from the group consisting of a conjugate base of carboxymethyl methacrylate, and a conjugate base of carboxymethyl acrylate. 7. The complex according to claim 1 , wherein M represents hafnium. 8. The complex according to claim 2 , wherein M represents hafnium. 9. The complex according to claim 3 , wherein M represents hafnium. 10. The complex according to claim 4 , wherein M represents hafnium. 11. The complex according to claim 5 , wherein M represents hafnium. 12. The complex according to claim 6 , wherein M represents hafnium. 13. The complex according to claim 1 , wherein M represents zirconium. 14. The complex according to claim 2 , wherein M represents zirconium. 15. The complex according to claim 3 , wherein M represents zirconium. 16. The complex according to claim 4 , wherein M represents zirconium. 17. The complex according to claim 5 , wherein M represents zirconium. 18. The complex according to claim 6 , wherein M represents zirconium. 19. The complex according to claim 4 , wherein X in the formula (1) is a ligand comprising a conjugate base of 3-(methacryloyloxy)-1-propanesulfonic acid, and M represents hafnium. 20. The complex according to claim 6 , wherein X in the formula (1) is a ligand comprising a conjugate base of carboxymethyl methacrylate, and M represents hafnium.

Assignees

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Classifications

  • Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

  • Metals or metal containing compounds · CPC title

  • Metallic compounds other than hydrides and other than metallo-organic compounds; Boron halide or aluminium halide complexes with organic compounds containing oxygen · CPC title

  • of silicon, germanium, tin, lead, titanium, zirconium or hafnium · CPC title

  • C08F30/04Primary

    containing a metal · CPC title

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What does patent US9499646B2 cover?
A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represent…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification C08F30/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).