Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9496404-B2
Application number	US-201113034726-A
Country	US
Kind code	B2
Filing date	Feb 25, 2011
Priority date	Mar 5, 2010
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable semiconductor device. Still another object is to provide a semiconductor device having low power consumption. Yet another object is to provide a manufacturing method of a semiconductor device having low power consumption. Furthermore, another object is to provide a semiconductor device which can be manufactured with high mass productivity. Another object is to provide a manufacturing method of a semiconductor device which can be manufactured with high mass productivity. An impurity remaining in an oxide semiconductor layer is removed so that the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after adding a halogen element into the oxide semiconductor layer, heat treatment is performed to remove an impurity from the oxide semiconductor layer. The halogen element is preferably fluorine.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a substrate containing a semiconductor material, the substrate including a channel formation region and an impurity region;
a first gate insulating layer over the substrate;
a first gate electrode over the substrate with the first gate insulating layer interposed therebetween;
an insulating surface over the substrate;
a source electrode and a drain electrode over the insulating surface;
an oxide semiconductor layer having a halogen element over the insulating surface, the source electrode, and the drain electrode;
a second gate insulating layer over the insulating surface, the source electrode, the drain electrode, and the oxide semiconductor layer; and
a second gate electrode over the second gate insulating layer,
wherein the oxide semiconductor layer is in contact with the source electrode and the drain electrode,
wherein a top surface of the first gate electrode and a top surface of the insulating surface are on substantially a same plane, and
wherein a concentration of the halogen element is higher than or equal to 10 15 atoms/cm 3 and lower than or equal to 10 18 atoms/cm 3 .

2. The semiconductor device according to claim 1 , wherein the semiconductor material comprises silicon.

3. The semiconductor device according to claim 1 , wherein fluorine is included as the halogen element.

4. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium and zinc.

5. The semiconductor device according to claim 1 , wherein the impurity region comprises phosphorus or arsenic.

6. The semiconductor device according to claim 1 , further comprising an electrode, wherein the oxide semiconductor layer and the second gate insulating layer are sandwiched between the electrode and one of the source electrode and the drain electrode.

7. The semiconductor device according to claim 6 , wherein the electrode overlaps with the first gate electrode.

Assignees

• Yamazaki Shunpei
• Kishida Hideyuki
• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Kishida Hideyuki

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3441

  Conductivity type · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10P95/408

  of Group III-V semiconductors, e.g. to render them semi-insulating · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title