Semiconductor device
US-2024413252-A1 · Dec 12, 2024 · US
Integrated circuit having chemically modified spacer surface
US9496359B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9496359-B2 |
| Application number | US-201213427062-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2012 |
| Priority date | Mar 28, 2011 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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- Title
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Abstract
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A method of fabricating an integrated circuit includes depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric. The first dielectric material is etched to form sidewall spacers on sidewalls of the gate stack. A top surface of the first dielectric material is chemically converted to a second dielectric material by adding at least one element to provide surface converted sidewall spacers. The second dielectric material is chemically bonded across a transition region to the first dielectric material.
First claim
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We claim: 1. A method of fabricating an integrated circuit, comprising: depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric; etching said first dielectric material to form sidewall spacers comprising said first dielectric material on sidewalls of said gate stack, and after etching to form the sidewall spacers, chemically converting a top surface of said first dielectric m…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9496359B2 cover?
- A method of fabricating an integrated circuit includes depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric. The first dielectric material is etched to form sidewall spacers on sidewalls of the gate stack. A top surface of the first dielectric material is chemically converted to a second di…
- Who is the assignee on this patent?
- Kirkpatrick Brian K, Jain Amitabh, Texas Instruments Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0184. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).