Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure
US9496350B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9496350-B2 |
| Application number | US-201514686024-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2015 |
| Priority date | Jul 27, 2012 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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Abstract
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A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]<100.
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What we claim are: 1. A p-type ZnO based compound semiconductor single crystal layer, wherein the layer comprises a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) at least one Group 11 element in a monovalent state which is selected from the group consisting of Cu and Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the following relation: 0.9≦[11]/[13]<100. 2. The p-type ZnO based compound semiconductor single crystal layer according to claim 1 , wherein the concentration of the Group 11 element [11] and the concentration of the Group 13 element [13] fulfill the following relation: 2≦[11]/[13]≦50. 3. A p-type ZnO based compound semiconductor single crystal layer, wherein the layer comprises a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) at least one Group 11 element in a monovalent state which is selected from the group consisting of Cu and Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al and In, and a concentration of the Group 11 element is at least 1×10 19 cm −3 and the concentration is approximately constant through the thickness of the layer. 4. A ZnO based compound semiconductor element comprising: an n-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor active layer disposed above the n-type ZnO based compound semiconductor layer, a p-type ZnO based compound semiconductor layer disposed above the ZnO based compound semiconductor active layer, an n electrode electrically connected to the n-type ZnO based compound semiconductor layer, and a p electrode electrically connected to the p-type ZnO based compound semiconductor layer, wherein: the p-type ZnO based compound semiconductor layer comprises a single crystal layer co-doped with (i) at least one Group 11 element in a monovalent state which is selected from the group consisting of Cu and Ag and (ii) a Group 13 element which is at least one element selected from the group consisting of B, Ga, Al and In, wherein a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the following relation: 0.9≦[11]/[13]<100. 5. The ZnO based compound semiconductor element according to claim 4 , wherein the concentration of the Group 11 element [11] and the concentration of the Group 13 element [13] fulfill the relation: 2≦[11]/[13]≦50. 6. A ZnO based compound semiconductor element comprising: an n-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor active layer disposed above the n-type ZnO based compound semiconductor layer, a p-type ZnO based compound semiconductor layer disposed above the ZnO based compound semiconductor active layer, an n electrode electrically connected to the n-type ZnO based compound semiconductor layer, and a p electrode electrically connected to the p-type ZnO based compound semiconductor layer, wherein: the p-type ZnO based compound semiconductor layer comprises a single crystal layer co-doped with (i) at least one Group 11 element in a monovalent state which is selected from the group consisting of Cu and Ag and (ii) a Group 13 element which is at least one element selected from the group consisting of B, Ga, Al and In, wherein a concentration of the Group 11 element is at least 1×10 19 cm −3 and the concentration is approximately constant through the thickness of the layer.
Assignees
Inventors
Classifications
P-type · CPC title
N-type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
- H10P14/3426Primary
Oxides · CPC title
characterised by treatments done after the formation of the materials · CPC title
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- What does patent US9496350B2 cover?
- A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 ele…
- Who is the assignee on this patent?
- Stanley Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).