P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure
US-9496350-B2 · Nov 15, 2016 · US
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Patent family 48949005
This patent family groups 4 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 48949005 |
| Family type | — |
| Earliest priority | Jul 27, 2012 |
| First filing country | US |
| Member publications | 4 |
| Countries | US |
| Representative publication | US9496350B2 — P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure |
Representative publication
Best representative member for this family based on priority and filing country.
US9496350B2 — P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure (published Nov 15, 2016)
Member publications
Related publications in this family.
P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
US-2015287794-A1 · Oct 8, 2015 · US
Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
US-9064790-B2 · Jun 23, 2015 · US
Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure
US-9064791-B2 · Jun 23, 2015 · US