Contamination trap for a lithographic apparatus

US9494879B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9494879-B2
Application numberUS-201314395981-A
CountryUS
Kind codeB2
Filing dateApr 5, 2013
Priority dateApr 23, 2012
Publication dateNov 15, 2016
Grant dateNov 15, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed is a contamination trap arrangement ( 300 ) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure ( 310 ) for trapping the debris particles; a heating arrangement ( 330 ) for heating the vane structure, the heating arrangement being in thermal communication with the vane structure; a cooling arrangement ( 350 ) for transporting heat generated as a result of the plasma formation, away from the vane structure, and a gap ( 370 ) between the heating arrangement and the cooling arrangement. The cooling arrangement is in thermal communication with the vane structure via the heating arrangement and the gap and the contamination trap also comprises a heat transfer adjustment arrangement operable to adjust the heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between the surfaces defining the gap.

First claim

Opening claim text (preview).

The invention claimed is: 1. A contamination trap arrangement configured to trap debris particles that are generated with formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation, the contamination trap comprising; a plurality of vanes configured to trap the debris particles; a heating arrangement configured to heat the plurality of vanes, the heating arrangement being in thermal communication with the plurality of vanes; a cooling arrangement configured to transport heat generated as a result of the plasma formation, away from the plurality of vanes; and a gap between the heating arrangement and the cooling arrangement, wherein the cooling arrangement is in thermal communication with the plurality of vanes via the heating arrangement and the gap. 2. The contamination trap arrangement of claim 1 , wherein the plurality of vanes are attached to an inside of a substantially cylindrical structure, and the heating arrangement, the gap and the cooling arrangement are arranged concentrically around an outside of the substantially cylindrical structure. 3. The contamination trap arrangement of claim 2 , wherein the heating arrangement comprises heating elements embedded within a wall of a conductive cylinder. 4. The contamination trap arrangement of claim 2 , wherein the cooling arrangement comprises cooling elements embedded within a wall of a conductive cylinder. 5. The contamination trap arrangement of claim 2 , wherein part of the contamination trap arrangement inside of the gap is arranged to be rotatable relative to part of the contamination trap arrangement outside of the gap to obtain a rotational movement. 6. The contamination trap arrangement of claim 1 , wherein the contamination trap further comprises a heat transfer adjustment configured to adjust heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between surfaces defining the gap. 7. The contamination trap of claim 6 , wherein the heat transfer adjustment arrangement is configured to control the relative movement such that: when heating of the plurality of vanes is required, a speed of the relative movement is either zero or sufficiently slow as to prevent turbulent flow in the fluid inside of the gap; and when cooling of the plurality of vanes is required, a speed of the relative movement is sufficiently fast as to cause turbulent flow in the fluid inside of the gap. 8. The contamination trap of claim 6 , wherein the heat transfer adjustment arrangement is configured to control a speed of the relative movement in real time so as to maintain a temperature of the plurality of vanes within predetermined limits. 9. The contamination trap arrangement of claim 6 , wherein the controllable relative movement is rotational. 10. The contamination trap arrangement of claim 6 , wherein the plurality of vanes are attached to an inside of a substantially cylindrical structure, and the heating arrangement, the gap and the cooling arrangement are arranged concentrically around an outside of the substantially cylindrical structure, and wherein the controllable relative movement is rotational. 11. A radiation source comprising: a plasma formation site located at a position in which a fuel will be contacted by a beam of radiation to form a plasma; and a contamination trap comprising; a plurality of vanes configured to trap debris particles; a heating arrangement configured to heat the plurality of vanes, the heating arrangement being in thermal communication with the plurality of vanes; a cooling arrangement configured to transport heat generated as a result of the plasma formation, away from the plurality of vanes; and a gap between the heating arrangement and the cooling arrangement, wherein the cooling arrangement is in thermal communication with the plurality of vanes via the heating arrangement and the gap. 12. A radiation source according to claim 11 , wherein the contamination trap further comprises a heat transfer adjustment configured to adjust heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between surfaces defining the gap. 13. A lithographic apparatus, comprising: a radiation source comprising; a plurality of vanes configured to trap debris particles; a heating arrangement configured to heat the plurality of vanes, the heating arrangement being in thermal communication with the plurality of vanes; a cooling arrangement configured to transport heat generated as a result of the plasma formation, away from the plurality of vanes; and a gap between the heating arrangement and the cooling arrangement, wherein the cooling arrangement is in thermal communication with the plurality of vanes via the heating arrangement and the gap; an illumination system configured to condition a radiation beam; a support configured to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table configured to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate.

Assignees

Inventors

Classifications

  • Housing of the apparatus for producing X-rays; Environment inside the housing · CPC title

  • Reduction, prevention or protection from contamination; Cleaning · CPC title

  • of optical system · CPC title

  • by plasma extreme ultraviolet [EUV] sources · CPC title

  • Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

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What does patent US9494879B2 cover?
Disclosed is a contamination trap arrangement ( 300 ) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure ( 310 ) for trapping the debris particles; a heating arrangement ( 330 ) for heating the vane structure, the heating arrangemen…
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F7/70916. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).