Mask blank and method of manufacturing phase shift mask

Patent metadata

Field	Value
Publication number	US-9494852-B2
Application number	US-201314414357-A
Country	US
Kind code	B2
Filing date	Jun 25, 2013
Priority date	Jul 13, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2 , a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1 . The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.

First claim

The invention claimed is:

1. A mask blank used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern, wherein the mask blank has a structure in which an etching stopper film, a thin film for pattern formation and an etching mask film are laminated on a transparent substrate in this order,
the etching stopper film is made of a material containing chromium and oxygen and the oxygen content is more than 50 at %,
the thin film is made of a material that can be dry-etched by a fluorine-based gas, and
the etching mask film is made of a material containing chromium, the content of chromium therein is not less than 45 at %, and the content of oxygen therein is not more than 30 at %.

2. The mask blank according to claim 1 , wherein the etching stopper film is made of a material that can be dry-etched by a chlorine-based gas that does not contain oxygen.

3. The mask blank according to claim 1 , wherein the thin film is made of a material containing a transition metal and silicon.

4. The mask blank according to claim 3 , wherein the thin film has an oxidized layer formed as the surface layer of the thin film, that is placed on a side opposite to the transparent substrate wherein the transition metal content is not more than 4 at % and the oxygen content is not less than 30 at %.

5. The mask blank according to claim 3 , wherein the thin film has a laminated structure having a lower layer and an upper layer, and the total content of nitrogen and oxygen in the upper layer is greater than the total content of nitrogen and oxygen in the lower layer.

6. The mask blank according to claim 5 , wherein the upper layer has an oxidized layer formed as the surface layer of the thin film, that is placed on a side opposite to the lower layer wherein the transition metal content is not more than 4 at % and the oxygen content is not less than 30 at %.

7. The mask blank according to claim 1 , wherein the thin film is made of a material containing tantalum.

8. The mask blank according to claim 7 , wherein the thin film has a highly oxidized layer having an oxygen content of not less than 60 at % formed as the surface layer of the thin film, that is placed on a side opposite to the transparent substrate.

9. The mask blank according to claim 1 , wherein a resist film having a thickness of less than 150 nm is provided on the etching mask film.

10. The mask blank according to claim 1 , wherein the thickness of the etching stopper film is not less than 3 nm and not more than 10 nm.

11. The mask blank according to claim 1 , wherein the thickness of the etching mask film is not less than 3 nm and not more than 15 nm.

12. The mask blank according to claim 1 , wherein the thickness of the thin film is not more than 60 nm.

13. The mask blank according to claim 1 , having a laminated structure having the thin film and the etching stopper film, wherein the optical density relative to ArF exposure light is not less than 2.8.

14. A method of manufacturing a phase shift mask using the mask blank according to claim 1 , comprising:
a step for forming a first resist pattern on the etching mask film,
a step for forming an etching mask pattern by dry etching the etching mask film using a mixed gas of a chlorine-based gas and oxygen gas and using the first resist pattern as a mask,
a step for removing the first resist pattern,
a step for forming a thin film pattern by dry etching the thin film using a fluorine-based gas and using the etching mask pattern as a mask,
a step for forming an etching stopper pattern by dry etching the etching stopper film using a chlorine-based gas that does not contain oxygen gas and using the etching mask pattern as a mask,
a step for forming a second resist pattern on the etching mask pattern,
a step for forming a substrate-engraved pattern by dry etching a transparent substrate using a fluorine-based gas and using the second resist pattern as a mask,
a step for removing the second resist pattern, and
a step for removing the etching mask pattern.

15. The method of manufacturing a phase shift mask according to claim 14 , wherein the step for removing the etching mask pattern is carried out by dry etching using a mixed gas of a chlorine-based gas and oxygen gas.

Assignees

• Hoya Corp

Inventors

• Okubo Yasushi
• Ohkubo Ryo

Classifications

• G03F1/26 Primary

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• G03F1/80

  Etching · CPC title

• C03C17/3435

  comprising a nitride, oxynitride, boronitride or carbonitride · CPC title

• C03C2218/33

  by etching · CPC title