Polishing composition, method for fabricating thereof and method of chemical mechanical polishing using the same

Patent metadata

Field	Value
Publication number	US-9493677-B2
Application number	US-201313924379-A
Country	US
Kind code	B2
Filing date	Jun 21, 2013
Priority date	Jun 22, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

First claim

What is claimed is:

1. A water-based polishing slurry composition for planarizing a chalcogenide material or a chalcogenide glass material thin film, the polishing slurry composition comprising:
nano-diamond particles as a polishing material; and
poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing slurry composition,
wherein an average particle size of the nano-diamond particles ranges from 10 nm to 120 nm, a content of the nano-diamond particles in the polishing slurry composition ranges from 0.01 weight % to 10 weight %, and a content of the poly(sodium 4-styrenesulfonate) in the polishing slurry composition ranges from 0.03 weight % to 2 weight %, and
wherein the chalcogenide material is selected from the group consisting of GeSbTe, GeSe, GeTeAs, GeSnTe, SeSnTe, GaSeTe, GeTeSnAu, SeSb 2 , InSe, GeTe, BiSeSb, PdTeGeSn, InSeTiCo, InSbTe, In 3 SbTe 2 , GeTeSb 2 , GeTe 3 Sb, GeSbTePd, AgInSbTe, CuSe, and a combination thereof.

2. The polishing slurry composition of claim 1 , wherein the nano-diamond particles comprise secondary particles, the secondary particles being provided by aggregating primary particles having an average particle size of 3 nm to 5 nm.

3. The polishing slurry composition of claim 1 , further comprising deionized water and hydrogen peroxide.

4. The polishing slurry composition of claim 3 , wherein a content of the deionized water in the polishing slurry composition ranges from 80 weight % to 99 weight %, and a content of the hydrogen peroxide ranges from 0.1 weight % to 10 weight %.

5. A method of preparing a polishing slurry composition for planarizing a chalcogenide material or a chalcogenide glass material thin film, the method comprising:
providing a water-based mixture for milling comprising a nano-diamond powder as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles; and
attrition milling the water-based mixture until the nano-diamond powder is milled into nano-diamond particles having an average particle size of 10 nm to 120 nm,
wherein a content of the nano-diamond particles in the polishing slurry composition ranges from 0.01 weight % to 10 weight %, and a content of the poly(sodium 4-styrenesulfonate) in the polishing slurry composition ranges from 0.03 weight % to 2 weight %, and
wherein the chalcogenide material is selected from the group consisting of GeSbTe, GeSe, GeTeAs, GeSnTe, SeSnTe, GaSeTe, GeTeSnAu, SeSb 2 , InSe, GeTe, BiSeSb, PdTeGeSn, InSeTiCo, InSbTe, In 3 SbTe 2 , GeTeSb 2 , GeTe 3 Sb, GeSbTePd, AgInSbTe, CuSe, and a combination thereof.

6. The method of claim 5 , wherein the nano-diamond powder comprises an aggregation of particles having an average particle size of 3 nm to 5 nm.

7. The method of claim 5 , wherein the nano-diamond powder is used as a polishing material and the poly(sodium 4-styrenesulfonate) is used as a dispersion stabilizer for the nano-diamond power in the polishing slurry composition.

8. A chemical mechanical polishing method comprising:
providing a substrate having a surface, the substrate having a chalcogenide on the surface;
causing a polishing pad to contact the surface of the substrate;
providing a water-based polishing slurry composition between the polishing pad and the surface of the substrate, the polishing slurry composition comprising nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing slurry composition; and
planarizing the surface of the substrate including the chalcogenide by using at least the polishing slurry composition,
wherein an average particle size of the nano-diamond particles ranges from 10 nm to 120 nm, a content of the nano-diamond particles in the polishing slurry composition ranges from 0.01 weight % to 10 weight %, and a content of the poly(sodium 4-styrenesulfonate) in the polishing slurry composition ranges from 0.03 weight % to 2 weight %, and
wherein the chalcogenide is selected from the group consisting of GeSbTe, GeSe, GeTeAs, GeSnTe, SeSnTe, GaSeTe, GeTeSnAu, SeSb 2 , InSe, GeTe, BiSeSb, PdTeGeSn, InSeTiCo, InSbTe, In 3 SbTe 2 , GeTeSb 2 , GeTe 3 Sb, GeSbTePd, AgInSbTe, CuSe, and a combination thereof.

9. The method of claim 8 ,
wherein the chalcogenide includes a thin film of chalcogenide glass material.

10. The method of claim 8 , wherein the nano-diamond particles comprise secondary particles provided by aggregating primary particles having an average particle size of 3 nm to 5 nm.

Assignees

• Sk Hynix Inc
• Univ Korea Res & Bus Found

Inventors

• Lim Dae Soon
• Yang Il Ho
• Lee Seung Koo
• Shin Dong Hee
• Lee Dong Hyeon
• Lee Yang Bok

Classifications

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title