Method for pore sealing of porous materials using polyimide langmuir-blodgett film

Patent metadata

Field	Value
Publication number	US-9492841-B2
Application number	US-201313847457-A
Country	US
Kind code	B2
Filing date	Mar 19, 2013
Priority date	Mar 20, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

First claim

The invention claimed is:

1. A method for pore sealing a porous substrate, comprising:
(a) forming a continuous monolayer of a polyimide precursor on a liquid surface; and
(b) transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, wherein the porous substrate is an ultra-low κ dielectric material having a dielectric constant κ lower than 2.3 and the porous substrate has a pore size of 1 to 5 nm;
and further comprising:
(c) imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate.

2. The method according to claim 1 , wherein both forming said continuous monolayer of said polyimide precursor on the liquid surface and transferring said polyimide precursor monolayer onto the porous substrate with said Langmuir-Blodgett technique are repeated a number of times, so that said sealing layer on said porous substrate comprises a plurality of said monolayers.

3. The method according to claim 2 , wherein said sealing layer has a thickness lower than 5 nm.

4. The method according to claim 1 , wherein the polyimide precursor is polyamic acid alkylamine salt.

5. The method according to claim 1 , wherein the sealing layer does not penetrate into pores of the porous substrate.

6. The method according to claim 1 , wherein the dielectric constant κ is lower than 2.1.

7. The method according to claim 1 , wherein the porous substrate has an average pore size of 2 nm.

8. The method according to claim 1 , wherein the porous substrate is a porous organosilicate.

9. The method according to claim 8 , wherein the porous organosilicate comprises SiOCH material having a κ-value of 2.3 and an average pore size of 2 nm.

Assignees

• Imec
• St Petersburg Electrotechnical Univ

Inventors

• Luchinin Victor
• Goloudina Svetlana
• Pasyuta Vyacheslav
• Ivanov Alexey
• Baklanov Mikhail
• Krishtab Mikhail

Classifications

• H10P14/6516

  of treatments performed after formation of the materials · CPC title

• H10P14/6344

  using Langmuir-Blodgett techniques · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• B05D1/208 Primary

  After-treatment of monomolecular films · CPC title

• B32B2457/00

  Electrical equipment · CPC title