Heterojunction bipolar transistor having a germanium raised extrinsic base
US-9209264-B2 · Dec 8, 2015 · US
Bipolar transistor with carbon alloyed contacts
US9490352B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9490352-B2 |
| Application number | US-201615074633-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2016 |
| Priority date | Feb 18, 2014 |
| Publication date | Nov 8, 2016 |
| Grant date | Nov 8, 2016 |
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Abstract
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A method for forming a bipolar junction transistor includes forming a collector intrinsic region, an emitter intrinsic region and an intrinsic base region between the collector intrinsic region and the emitter intrinsic region. A collector extrinsic contact region is formed in direct contact with the collector intrinsic region; an emitter extrinsic contact region is formed on the emitter intrinsic region and a base extrinsic contact region is formed in direct contact with the intrinsic base region. Carbon is introduced into at least one of the collector extrinsic contact region, the emitter extrinsic contact region and the base extrinsic contact region to suppress diffusion of dopants into the junction region.
First claim
Opening claim text (preview).
What is claimed is: 1. A bipolar transistor device, comprising: a collector intrinsic region, an emitter intrinsic region and an intrinsic base region formed between the collector intrinsic region and the emitter intrinsic region; a collector extrinsic contact region formed in contact with the collector intrinsic region; an emitter extrinsic contact region formed in contact with the emitter intrinsic region; a base extrinsic contact region formed in contact with the intrinsi…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9490352B2 cover?
- A method for forming a bipolar junction transistor includes forming a collector intrinsic region, an emitter intrinsic region and an intrinsic base region between the collector intrinsic region and the emitter intrinsic region. A collector extrinsic contact region is formed in direct contact with the collector intrinsic region; an emitter extrinsic contact region is formed on the emitter intrin…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D10/051. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).