Transistor, liquid crystal display device, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9490350-B2
Application number	US-201414338380-A
Country	US
Kind code	B2
Filing date	Jul 23, 2014
Priority date	Sep 10, 2010
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

First claim

What is claimed is:

1. A method for manufacturing a liquid crystal display device, comprising the steps of:
forming a gate electrode and a wiring over a substrate by a first photolithography step;
forming a gate insulating layer over the gate electrode;
forming a semiconductor layer over the gate insulating layer;
forming a source electrode and a drain electrode over the semiconductor layer by a second photolithography step;
forming an insulating layer over the source electrode and the drain electrode;
forming a contact hole by selectively removing a first part of the insulating layer overlapping with the drain electrode and removing a second part of the insulating layer, part of the semiconductor layer, and part of the gate insulating layer, by a third photolithography step; and
forming a pixel electrode over the insulating layer by a fourth photolithography step,
wherein the second part of the insulating layer, the part of the semiconductor layer, and the part of the gate insulating layer each overlap with the wiring.

2. The method for manufacturing a liquid crystal display device, according to claim 1 , wherein a base layer is formed between the substrate and the gate electrode.

3. The method for manufacturing a liquid crystal display device, according to claim 1 , wherein the semiconductor layer comprises an oxide semiconductor.

4. The method for manufacturing a liquid crystal display device, according to claim 3 , wherein the oxide semiconductor comprises indium and zinc.

5. The method for manufacturing a liquid crystal display device, according to claim 3 , wherein the insulating layer comprises at least one of materials which are included into the oxide semiconductor.

6. The method for manufacturing a liquid crystal display device, according to claim 1 , wherein the gate electrode, the source electrode, or the drain electrode is formed using a material containing copper.

7. The method for manufacturing a liquid crystal display device, according to claim 6 , wherein a highest temperature in a process after the gate electrode, the source electrode, or the drain electrode is formed is lower than or equal to 450° C.

8. The method for manufacturing a liquid crystal display device, according to claim 1 , wherein the gate electrode, the source electrode, or the drain electrode is formed using a material containing aluminum.

9. The method for manufacturing a liquid crystal display device, according to claim 8 , wherein a highest temperature in a process after the gate electrode, the source electrode, or the drain electrode is formed is lower than or equal to 380° C.

10. The method for manufacturing a liquid crystal display device, according to claim 1 , wherein the first photolithography step, the second photolithography step, the third photolithography step, and the fourth photolithography step each comprise a step of forming a resist mask, a step of etching a conductive layer or an insulating layer, and a step of removing the resist mask.

11. A method for manufacturing a liquid crystal display device, comprising the steps of:
forming a gate electrode, a first wiring and a capacitor wiring over a substrate by a first photolithography step;
forming a gate insulating layer over the gate electrode;
forming a semiconductor layer over the gate insulating layer;
forming a source electrode, a drain electrode and a second wiring over the semiconductor layer by a second photolithography step; and
forming a pixel electrode over the source electrode, the drain electrode and the second wiring by a third photolithography step,
wherein the first wiring is electrically connected to the gate electrode,
wherein the second wiring is electrically connected to the source electrode,
wherein the pixel electrode is electrically connected to the drain electrode,
wherein the semiconductor layer overlaps with the first wiring, the second wiring, the pixel electrode, and the capacitor wiring, and
wherein the semiconductor layer overlaps with an entirety of the pixel electrode.

12. The method for manufacturing a liquid crystal display device, according to claim 11 ,
wherein the capacitor wiring comprises an extending portion along the second wiring, and
wherein the extending portion extends beyond the end portion of the pixel electrode in a direction parallel to a direction in which the second wiring extends.

13. The method for manufacturing a liquid crystal display device, according to claim 12 , wherein a part of the capacitor wiring or the extending portion overlaps with the pixel electrode.

14. The method for manufacturing a liquid crystal display device, according to claim 12 , wherein the extending portion comprises a bent portion or a curved portion.

15. The method for manufacturing a liquid crystal display device, according to claim 11 ,
wherein at least part of the first wiring is provided with a region extending beyond both end portions of the first wiring in a line width direction and covering the first wiring, and
wherein the semiconductor layer does not exist in the region.

16. The method for manufacturing a liquid crystal display device, according to claim 11 , wherein the semiconductor layer comprises an oxide semiconductor.

17. The method for manufacturing a liquid crystal display device, according to claim 16 , wherein the oxide semiconductor comprises indium and zinc.

18. The method for manufacturing a liquid crystal display device, according to claim 11 , wherein the pixel electrode is electrically connected to the drain electrode with an interlayer insulator interposed therebetween.

19. The method for manufacturing a liquid crystal display device, according to claim 11 , wherein the pixel electrode is electrically connected to the drain electrode with an interlayer insulator interposed therebetween.

Assignees

• Semiconductor Energy Lab

Inventors

• Koyama Jun

Classifications

• G02F1/136213

  Storage capacitors associated with the pixel electrode · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title

• G02F2201/123

  pixel · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title