Substrate, semiconductor device, and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9490132-B2
Application number	US-201514796551-A
Country	US
Kind code	B2
Filing date	Jul 10, 2015
Priority date	Aug 5, 2011
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.

First claim

What is claimed is:

1. A substrate having a front surface and a back surface, the back surface having a distorted crystal lattice, and at least a part of said front surface is composed of single crystal silicon carbide,
said substrate having an average value of surface roughness Ra at said front surface not greater than 0.5 nm and a standard deviation of said surface roughness Ra not greater than 0.2 nm, and an average value of surface roughness Ra at said back surface less than 0.3 nm and a diameter of said front surface not smaller than 125 mm and not greater than 300 mm.

2. The substrate according to claim 1 , wherein
nitrogen is introduced in said single crystal silicon carbide, and a concentration of said nitrogen in said single crystal silicon carbide is not higher than 2×10 19 /cm 3 .

3. The substrate according to claim 1 , wherein
nitrogen is introduced in said single crystal silicon carbide, and concentration of said nitrogen in said single crystal silicon carbide is not lower than 4×10 18 /cm 3 and not higher than 2 ×10 19 /cm 3 .

4. The substrate according to claim 1 , wherein
relational expressions of 100≦D/T≦1000 and O≦Wb/T≦0.2 are satisfied, where D represents a diameter of said front surface, T represents a thickness of said substrate, and Wb represents a warp of said back surface.

5. The substrate according to claim 1 , wherein
a crystal structure of the silicon carbide in said part of said front surface is a 4H type, and said part of said front surface includes a crystal plane having an off angle with respect to a {0001} plane not smaller than 0.1° and not greater than 10°.

6. The substrate according to claim 1 , wherein
a crystal structure of the silicon carbide in said part of said front surface is a 4H type, and said part of said front surface includes a crystal plane having an off angle with respect to a {03-38} plane not greater than 4°.

7. The substrate according to claim 1 , wherein
a crystal structure of the silicon carbide in said part of said front surface is a 4H type, and said part of said front surface includes a crystal plane haying an off angle with respect to a {000-1} plane not smaller than 0.01° and not greater than 6°.

8. The substrate according to claim 1 , composed of one piece of single crystal silicon carbide.

9. A semiconductor device, comprising:
the substrate according to claim 1 ;
an epitaxial layer composed of silicon carbide and formed on said front surface of said substrate; and
an electrode formed on said epitaxial layer.

10. A method of manufacturing a semiconductor device, comprising the steps of:
preparing the substrate according to claim 1 ;
forming an epitaxial layer composed of silicon carbide on said front surface of said substrate; and
forming an electrode on said epitaxial layer.

Assignees

• Sumitomo Electric Industries

Inventors

• Ishibashi Keiji

Classifications

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10P90/00 Primary

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2925

  Surface structures · CPC title