Photomask blank, process for production of photomask, and chromium-containing material film

Patent metadata

Field	Value
Publication number	US-9488907-B2
Application number	US-201514592430-A
Country	US
Kind code	B2
Filing date	Jan 8, 2015
Priority date	Nov 22, 2010
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

First claim

The invention claimed is:

1. A photo mask blank comprising a film comprising chromium and another element, wherein the other element is capable of bringing a mixture of the other element and the chromium into a liquid phase at a temperature of 400° C. or lower, and wherein the other element is at least one element selected from the group consisting of indium, tin, bismuth, thallium, lithium, sodium, potassium, and mercury.

2. The photo mask blank according to claim 1 , wherein the film has a region in a thickness direction thereof in which the other element is present at a concentration of 0.01 atomic % to 20 atomic %.

3. The photo mask blank according to claim 2 , wherein the region in the thickness direction has a thickness of 50% or more of a total film thickness of the film.

4. The photo mask blank according to claim 1 , wherein the chromium is present in the form of a chromium metal, a chromium oxide, a chromium nitride, a chromium carbide, a chromium oxynitride, a chromium oxycarbide, a chromium carbonitride, or a chromium oxycarbonitride.

5. The photo mask blank according to claim 1 , wherein the film is a light-shielding film, an etching mask film, or an etching stopper film.

6. The photo mask blank according to claim 5 , wherein the film is a light-shielding film having a laminated structure comprising an antireflection layer and a light-shielding layer, and at least one of the antireflection layer and the light-shielding layer has a region in which the other element is present at a concentration of 0.01 atomic % to 20 atomic % relative to chromium, and the other element is capable of bringing a mixture of the other element and the chromium into a liquid phase at a temperature of 400° C. or lower.

7. The photo mask blank according to claim 1 , wherein a ratio (R Cl /R F ) of a chlorine dry etching rate (R Cl ) and a fluorine dry etching rate (R F ) of the film is higher than that of a chromium film free of the other element.

8. The photo mask blank according to claim 1 , wherein the film is formed by a process of co-sputtering in which a chromium target and a target comprising other element are simultaneously sputtered.

9. A method for manufacturing a photo mask, comprising patterning the photo mask blank of claim 1 by contacting the film with a gas mixture comprising chlorine and oxygen.

10. The photo mask blank according to claim 1 , wherein the other element is bismuth.

11. The photo mask blank according to claim 1 , wherein the other element is thallium.

12. The photo mask blank according to claim 1 , wherein the other element is lithium.

13. The photo mask blank according to claim 1 , wherein the other element is sodium.

14. The photo mask blank according to claim 1 , wherein the other element is potassium.

15. The photo mask blank according to claim 1 , wherein the other element is mercury.

16. A film mainly comprising chromium, and further comprising another element, wherein the other element is capable of bringing a mixture of the other element and the chromium into a liquid phase at a temperature of 400° C. or lower, and wherein the other element is at least one element selected from the group consisting of indium, tin, bismuth, thallium, lithium, sodium, potassium, and mercury.

17. The film according to claim 16 , having a region in a thickness direction thereof in which the other element is present at a concentration of 0.01 atomic % to 20 atomic %.

18. The film according to claim 17 , wherein the region in the thickness direction has a thickness of 50% or more of a total film thickness of the film.

19. The film according to claim 16 , wherein the chromium is present in the form of a chromium metal, a chromium oxide, a chromium nitride, a chromium carbide, a chromium oxynitride, a chromium oxycarbide, a chromium carbonitride, or a chromium oxycarbonitride.

Assignees

• Shinetsu Chemical Co

Inventors

• Yoshikawa Hiroki
• Fukaya Souichi
• Inazuki Yukio
• Yamamoto Tsuneo
• Nakagawa Hideo

Classifications

• C23C14/0641

  Nitrides (C23C14/0617 takes precedence) · CPC title

• G03F1/80 Primary

  Etching · CPC title

• G03F1/50 Primary

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title

• G03F1/54

  Absorbers, e.g. of opaque materials · CPC title

• C23C14/0676

  Oxynitrides · CPC title