Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure

Patent metadata

Field	Value
Publication number	US-9484454-B2
Application number	US-201314080758-A
Country	US
Kind code	B2
Filing date	Nov 14, 2013
Priority date	Oct 29, 2008
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS transistor's polysilicon gate electrode. Fabrication of the shallow field oxide region is performed through a hard “bump” mask and controlled such that the bump oxide extends a minimal depth into the LDMOS transistor's drift (channel) region. The hard “bump” mask is also utilized to produce an N-type drift (N-drift) implant region and a P-type surface effect (P-surf) implant region, whereby these implants are “self-aligned” to the gate dielectric structure. The N-drift implant is maintained at Vdd by connection to the LDMOS transistor's drain diffusion. An additional Boron implant is utilized to form a P-type buried layer that connects the P-surf implant to the P-body region of the LDMOS transistor, whereby the P-surf implant is maintained at 0V.

First claim

We claim:

1. An LDMOS transistor fabricated on a semiconductor substrate, the transistor comprising:
a well region located in the semiconductor substrate and having a first conductivity type;
a base oxide layer located on an upper surface of the semiconductor substrate over a first portion of the well region;
a gate dielectric structure including a shallow field oxide region having a birds beak profile extending below the upper surface of the semiconductor substrate over a second portion of the well region;
a gate electrode including a first portion disposed over the base oxide layer and a second portion disposed over a portion of the gate dielectric structure;
a drift implant formed by a diffused dopant having the first conductivity type and disposed in the well region below the gate dielectric structure; and
a surface field implant formed by a diffused dopant having a second conductivity type and disposed in the well region below the drift implant,
wherein the drift implant and the surface field implant are self-aligned to the gate dielectric structure such that opposing edges of the gate dielectric structure are substantially aligned with corresponding outer boundary edges of the drift implant and the surface implant.

2. The LDMOS transistor of claim 1 ,
wherein the substrate includes a plurality of shallow trench isolation (STI) regions disposed adjacent to the LDMOS transistor, each said STI region extending at least a first depth below the upper surface of the semiconductor substrate, and
wherein the shallow field oxide region of the stacked gate dielectric structure extends a second depth below the upper surface of the semiconductor substrate, wherein the first depth is greater than the second depth.

3. The LDMOS transistor of claim 2 , wherein the first depth is at least ten times larger than the second depth.

4. The LDMOS transistor of claim 2 , wherein the second depth is 250 Angstroms or less.

5. The LDMOS transistor of claim 2 ,
wherein the gate dielectric structure further comprises a raised dielectric structure disposed entirely on the shallow field oxide region, and
wherein edges of both the shallow field oxide region and the raised dielectric structure are substantially aligned with each other and with said corresponding outer boundary edges of the drift implant and the surface implant.

6. An LDMOS transistor fabricated on a semiconductor substrate, the transistor comprising:
a well region located in the semiconductor substrate and having a first conductivity type;
a base oxide layer located on an upper surface of the semiconductor substrate over a first portion of the well region;
a gate dielectric structure including a shallow field oxide region having a birds beak profile extending below the upper surface of the semiconductor substrate over a second portion of the well region;
a gate electrode including a first portion disposed over the base oxide layer and a second portion disposed over a portion of the gate dielectric structure;
a drift implant formed by a diffused dopant having the first conductivity type and disposed in the well region below the gate dielectric structure;
a surface field implant formed by a diffused dopant having a second conductivity type and disposed in the well region below the drift implant,
a diffusion body region formed by a dopant having the second conductivity type located in the first portion of the well region;
a first buried layer formed by a dopant having the first conductivity type and disposed in a lower portion of the well region; and
a second buried layer formed by a dopant having the second conductivity type disposed in the well region above the first buried layer, wherein the second buried layer extends under the diffusion body region and the surface field implant such that the surface field implant is maintained at a first voltage level of said diffusion body region,
wherein the drift implant and the surface field implant are self-aligned to the gate dielectric structure such that opposing edges of the gate dielectric structure are substantially aligned with corresponding outer boundary edges of the drift implant and the surface implant.

7. The LDMOS transistor of claim 6 , further comprising a drain region formed by a diffused dopant having the first conductivity type and disposed in the well region adjacent to the gate dielectric structure, wherein said drift implant is electrically connected to the drain region such that the drift implant is maintained at a second voltage level of said drain region.

8. A double-RESURF LDMOS transistor fabricated on a semiconductor substrate, the transistor comprising:
a well region located in the semiconductor substrate having a first conductivity type;
a base oxide layer located on an upper surface of the semiconductor substrate over a first portion of the well region;
a gate dielectric structure located over a second portion of the well region;
a gate electrode disposed over a portion of the base oxide layer and a portion of the gate dielectric structure;
a drain region formed by a diffused dopant having the first conductivity type and disposed in the well region adjacent to the gate dielectric structure;
a drift implant formed by a diffused dopant having the first conductivity type and disposed in the well region below the gate dielectric structure;
a surface field implant formed by a diffused dopant having a second conductivity type and disposed in the well region below the drift implant such that the drift implant and the surface field implant form a horizontal PN junction;
a diffusion body region formed by a dopant having the second conductivity type located in the first portion of the well region;
a drift region formed by a portion of said well region and disposed between said drift implant and said gate dielectric structure, and extending between said drain region and said diffusion body region such that said drift region is at least partially located over the horizontal PN junction;
a first buried layer formed by a dopant having the first conductivity type and disposed in a lower portion of the well region; and
a second buried layer formed by a dopant having the second conductivity type disposed in the well region above the first buried layer,
wherein the second buried layer extends between the diffusion body region and the surface field implant such that the surface field implant is maintained at a first voltage level of said diffusion body region, and
wherein said drift implant is electrically connected to the drain region such that the drift implant is maintained at a second voltage level of said drain region.

9. The double-RESURF LDMOS transistor of claim 8 , wherein said drift implant and said surface field implant are configured such that said electric field has a substantially square shape.

10. The double-RESURF LDMOS transistor of claim 8 , wherein the drift implant and the surface field implant are self-aligned to the gate dielectric structure such that opposing edges of the gate dielectric structure are substantially aligned with corresponding outer boundary edges of the drift implant and the surface implant.

11. The double-RESURF LDMOS transistor of claim 8 , wherein the gate dielectric structure including a shallow field oxide region having a birds beak profile extending below the upper surface of the semiconductor substrate over the drift region.

12. The double-RESURF LDMOS transistor of claim 11 ,
wherein the substrate includes a plurality of shallow trench isolation (STI) regions disposed adjacent to the double-RESURF LDMOS transistor, each said STI region extending at least a first depth below the upper surface of the

Assignees

• Tower Semiconductor Ltd

Inventors

• Levy Sagy
• Levin Sharon
• Berkovitch Noel

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P32/1406

  by ion implantation · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title