Post ion implant stripper for advanced semiconductor application

Patent metadata

Field	Value
Publication number	US-9484218-B2
Application number	US-201013387787-A
Country	US
Kind code	B2
Filing date	Jul 26, 2010
Priority date	Jul 30, 2009
Publication date	Nov 1, 2016
Grant date	Nov 1, 2016

Abstract

The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H 2 O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

First claim

What is claimed is:

1. A composition consisting of:
(a) an amine selected from the group consisting of tetramethylammonium hydroxide, benzyl-trimethylammonium hydroxide, tetraethylammonium hydroxide and tetrabutylammonium hydroxide, and a combination thereof;
(b) an organic solvent A selected from the group consisting of dimethyl sulfoxide (DMSO), dimethyl sulfone (DMSO 2 ), γ-butyrolactone (BLO)(GBL), ethyl methyl ketone, 2-pentanone, 3-pentanone, 2-hexanone, isobutyl methyl ketone, 1-propanol, 2-propanol, butyl alcohol, pentanol, 1-hexanol, 1-heptanol, 1-octanol, ethyldiglycol (EDG), butyldiglycol (BDG), benzyl alcohol, benzaldehyde, tridecane, dodecane, undecane, decane, N,N-Dimethylethanolamine, di-n-propylamine, tri-n-propylamine, isobutylamine, sec-butylamine, cyclohexylamine, methylamiline, o-toluidine, m-toluidine, o-chloroaniline, m-chloroaniline, octylamine, N,N-diethylhydroxylamine, quinoline, N,N-dimethylethanolamine, and N,N-dimethylformamide, and a combination thereof;
(c) a co-solvent selected from the group consisting of an isopropyl alcohol, an isobutyl alcohol, a sec-butyl alcohol, an isopentyl alcohol, a tort-pentyl alcohol, ethylene glycol (EG), propylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2,3-propanetriol, 1-amino-2-propanol, isopropyl acetate, ethyl acetoacetate, triethanol amine, ethanolamine (MEA), formamide, dimethylacetamide (DMAC), 2-(methylamino_ethanol (NMEA), and N-ethyldiisopropylamine, and a combination thereof; and
(d) less than 1 wt % water; and
(e) optional additives.

2. The composition of claim 1 , wherein said amine is present in an amount of 1 to 10 wt %.

3. The composition of claim 1 , wherein said amine is present in an amount of 1 to 4 wt %.

4. The composition of claim 1 , wherein the organic solvent A is selected from the group consisting of dimethyl sulfoxide (DMSO), benzyl alcohol, 1-propanol, 2-propanol, butyldiglycol, pentanol, N,N-dimethylethanol amine, and Benzaldehyde and a combination thereof.

5. The composition of claim 1 , wherein the organic solvent A is selected from the group consisting of dimethyl sulfoxide (DMSO), benzyl alcohol, and butyldiglycol and a combination thereof.

6. The composition of claim 1 , wherein the co-solvent is selected from the group consisting of ethylene glycol, 1,2-propanediol, 1-amino-2-propanol, triethanol amine, ethanolamine (MEA), and isopropyl acetate and a combination thereof.

7. The composition of claim 1 , wherein the co-solvent is selected from the group consisting of ethylene glycol, triethanol amine, and ethanolamine (MEA) and a combination thereof.

8. The composition of claim 1 , wherein water is present in an amount of less than 0.5 wt %.

9. A method for post-ion implantation stripping, comprising
contacting a substrate having an implanted photoresist thereon with the composition of claim 1 under a process temperature for a period of time sufficient to remove the photoresist from the substrate.

10. The method of claim 9 , wherein the process temperature is 25° C. to 90° C.

11. The method of claim 9 , wherein the process temperature is 40° C. to 80° C.

12. The method of claim 9 , wherein the process temperature is 60° C. to 80° C.

13. The method of claim 9 , wherein the period of time is 20 min to 1 hr.

14. The composition of claim 1 , wherein the amine is tetramethylammonium hydroxide (TMAH).

15. The composition of claim 14 , wherein said amine is tetramethylammonium hydroxide (TMAH) which is present in an amount of 1 to 4 wt. %.

16. The composition of claim 15 , wherein water is present in an amount of less than 0.5 wt %.

17. The composition of claim 1 , wherein:
the amine is tetramethylammonium hydroxide (TMAH);
the organic solvent A is at least one selected from the group consisting of dimethyl sulfoxide (DMSO), benzyl alcohol, and butyldiglycol; and
the co-solvent is at least one selected from the group consisting of ethylene glycol, triethanol amine, and ethanolamine (MEA).

18. The composition of claim 17 , wherein water is present in an amount of less than 0.5 wt %.

19. A composition consisting of:
(a) an amine selected from the group consisting of tetramethylammonium hydroxide, benzyl-trimethylammonium hydroxide, tetraethylammonium hydroxide and tetrabutylammonium hydroxide, and a combination thereof;
(b) an organic solvent A selected from the group consisting of dimethyl sulfoxide (DMSO), dimethyl sulfone (DMSO 2 ), γ-butyrolactone (BLO)(GBL), ethyl methyl ketone, 2-pentanone, 3-pentanone, 2-hexanone, isobutyl methyl ketone, 1-propanol, 2-propanol, butyl alcohol, pentanol, 1-hexanol, 1-heptanol, 1-octanol, ethyldiglycol (EDG), butyldiglycol (BDG), benzyl alcohol, benzaldehyde, tridecane, dodecane, undecane, decane, N,N-Dimethylethanolamine, di-n-propylamine, tri-n-propylamine, isobutylamine, sec-butylamine, cyclohexylamine, methylamiline, o-toluidine, m-toluidine, o-chloroaniline, m-chloroaniline, octylamine, N,N-diethylhydroxylamine, quinoline, N,N-dimethylethanolamine, and N,N-dimethylformamide, and a combination thereof;
(c) a co-solvent selected from the group consisting of an isopropyl alcohol, an isobutyl alcohol, a sec-butyl alcohol, an isopentyl alcohol, a tert-pentyl alcohol, ethylene glycol (EG), propylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2,3-propanetriol, 1-amino-2-propanol, isopropyl acetate, ethyl acetoacetate, triethanol amine, ethanolamine (MEA), formamide, dimethylacetamide (DMAC), 2-(methylamino_ethanol (NMEA), and N-ethyldiisopropylamine, and a combination thereof; and
(d) less than 1 wt % water.

20. The composition of claim 1 , wherein said optional additives are present and are selected from the group consisting of a chelating agent, a surfactant and a mixture thereof.

21. The composition of claim 20 , wherein said additive is a chelating agent selected from the group consisting of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, 2,4-pentanedione and a mixture thereof.

22. The composition of claim 20 , wherein said additive is a surfactant selected from the group consisting of a non-ionic alkoxylated alcohol, a nonyl-phenol, a nonyl-ethoxylate and a mixture thereof.

Assignees

• Chen Chienshin
• Shen Meichin
• Chan Chiahao
• Klipp Andreas
• Basf Se

Inventors

• Chen Chienshin
• Shen Meichin
• Chan Chiahao
• Klipp Andreas

Classifications

• H10P50/287 Primary

  by chemical means · CPC title

• G03F7/425 Primary

  containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen · CPC title

• C11D11/0047

  Chemistry & Metallurgy · mapped topic

• H01L21/31133 Primary

  Electricity · mapped topic

• H10P50/68

  of insulating materials · CPC title