Semiconductor device including a resistor and method for the formation thereof

Patent metadata

Field	Value
Publication number	US-9478671-B2
Application number	US-201514602940-A
Country	US
Kind code	B2
Filing date	Jan 22, 2015
Priority date	Mar 15, 2013
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second material layer includes a semiconductor material. The second material layer is provided over the first material layer and includes a first sub-layer and a second sub-layer. The second sub-layer is provided over the first sub-layer. The first sub-layer and the second sub-layer are differently doped. Each of the first contact structure and the second contact structure provides an electrical connection to the second sub-layer of the second material layer.

First claim

What is claimed:

1. A resistor, comprising:
a first material layer comprising at least one of a metal and a metal compound, said first material layer positioned above a substrate;
a second material layer comprising a semiconductor material, said second material layer positioned above said first material layer, said second material layer comprising a first doped sub-layer and a second doped sub-layer positioned above said first doped sub-layer, wherein said first doped sub-layer is doped with a dopant of a first conductivity type and said second doped sub-layer is doped with a dopant of a second conductivity type, said second conductivity type being opposite to said first conductivity type; and
a first contact structure and a second contact structure, each of said first contact structure and said second contact structure providing an electrical connection to said second doped sub-layer of said second material layer.

2. The resistor of claim 1 , wherein said substrate has a thickness direction, wherein a dimension of said substrate in said thickness direction is less than any dimension of said substrate in any horizontal direction that is perpendicular to said thickness direction, and wherein said first and said second doped sub-layers of said second material layer define a plane of a PN transition between said first and said second doped sub-layer of said second material layer, said plane of said PN transition being substantially perpendicular to said thickness direction.

3. The resistor of claim 2 , wherein said first material layer and said second material layer define an interface between said first material layer and said second material layer, said interface being substantially perpendicular to said thickness direction.

4. The resistor of claim 3 , wherein said first contact structure is positioned at a first end of said resistor and said second contact structure is positioned at a second end of said resistor, said first and said second ends of said resistor being spaced apart along a longitudinal direction of said resistor that is substantially perpendicular to said thickness direction.

5. The resistor of claim 1 , wherein said semiconductor material comprises polysilicon.

6. The resistor of claim 5 , wherein said first doped sub-layer of said second material layer is doped with arsenic and said second doped sub-layer of said second material layer is doped with boron.

7. The resistor of claim 6 , wherein said second material layer further comprises a fluorine implant region.

8. The resistor of claim 7 , wherein a location of maximum concentration of fluorine in said fluorine implant region is positioned adjacent an interface between said first and said second doped sub-layers of said second material layer.

9. The resistor of claim 8 , wherein said resistor has a sheet resistance of more than about 800 ohm per square.

10. The resistor of claim 1 , wherein said first doped sub-layer of said second material layer is doped with boron and said second doped sub-layer of said second material layer is doped with arsenic.

11. A resistor, comprising:
a first material layer comprising at least one of a metal and a metal compound, said first material layer positioned above a substrate;
a second material layer comprising polysilicon or amorphous silicon, said second material layer positioned above said first material layer, said second material layer comprising:
a first doped sub-layer that is doped with a dopant of a first conductivity type;
a second doped sub-layer positioned above said first doped sub-layer, wherein said second doped sub-layer is doped with a dopant of a second conductivity type, said second conductivity type being opposite to said first conductivity type; and

a fluorine implant region; and
a first contact structure and a second contact structure, each of said first contact structure and said second contact structure providing an electrical connection to said second doped sub-layer of said second material layer.

12. The resistor of claim 11 , wherein said first and said second doped sub-layers of said second material layer define a plane of a PN transition between said first and said second doped sub-layer of said second material layer, said plane of said PN transition being substantially parallel to an upper surface of said substrate.

13. The resistor of claim 12 , wherein said first material layer and said second material layer define an interface between said first material layer and said second material layer, said interface being substantially parallel to said upper surface of said substrate.

14. The resistor of claim 13 , wherein said first contact structure is provided at a first end of said resistor and said second contact structure is provided at a second end of said resistor, said first and said second ends of said resistor being spaced apart along a longitudinal direction of said resistor that is substantially parallel to said upper surface of said substrate.

15. The resistor of claim 11 , wherein said first doped sub-layer of said second material layer is doped with arsenic and said second doped sub-layer of said second material layer is doped with boron.

16. The resistor of claim 11 , wherein said first doped sub-layer of said second material layer is doped with boron and said second doped sub-layer of said second material layer is doped with arsenic.

17. The resistor of claim 11 , wherein a location of maximum concentration of fluorine in said fluorine implant region is positioned adjacent an interface between said first and said second doped sub-layers of said second material layer.

18. A resistor positioned above a substrate, comprising:
a first material layer comprising at least one of a metal and a metal compound;
a second material layer comprising polysilicon or amorphous silicon, said second material layer positioned on and in contact with said first material layer, said second material layer comprising:
a first doped sub-layer that is doped with a dopant of a first conductivity type;
a second doped sub-layer positioned above said first doped sub-layer, wherein said second doped sub-layer is doped with a dopant of a second conductivity type, said second conductivity type being opposite to said first conductivity type, and wherein said first and said second doped sub-layers define a plane of a PN transition between said first and said second doped sub-layers that is substantially parallel to an upper surface of said substrate; and

a fluorine implant region, wherein a location of maximum concentration of fluorine in said fluorine implant region is positioned adjacent said plane of said PN transition; and
a first contact structure and a second contact structure, each of said first contact structure and said second contact structure providing an electrical connection to said second doped sub-layer of said second material layer.

19. The resistor of claim 18 , wherein said first material layer and said second material layer define an interface that is substantially parallel to said upper surface of said substrate.

20. The resistor of claim 1 , wherein said resistor is positioned on an upper surface of an isolation structure formed in a semiconductor layer of said substrate.

21. The resistor of claim 1 , wherein said resistor is laterally spaced apart and electrically isolated from a transistor element formed in and above an active region that is formed in a semiconductor layer of said substrate.

22. The resistor of claim 1 , wherein said resist

Assignees

• Globalfoundries Inc

Inventors

• Romanescu Alexandru

Classifications

• H10D84/817

  Combinations of field-effect devices and resistors only · CPC title

• Y10S438/914

  Doping · CPC title

• H10D1/474

  comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D1/47 Primary

  Resistors having no potential barriers · CPC title