Capacitive MEMS sensor devices

US9470710B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9470710-B2
Application numberUS-201313779160-A
CountryUS
Kind codeB2
Filing dateFeb 27, 2013
Priority dateFeb 27, 2013
Publication dateOct 18, 2016
Grant dateOct 18, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A packaged capacitive MEMS sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell including a first substrate having a thick and a thin dielectric region. A second substrate with a membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity. The membrane layer provides a fixed electrode and a released MEMS electrode over the MEMS cavity. A first through-substrate via (TSV) extends through a top side of the MEMS electrode and a second TSV through a top side of the fixed electrode. A metal cap is on top of the first TSV and second TSV. A third substrate including an inner cavity and outer protruding portions framing the inner cavity is bonded to the thick dielectric regions. The third substrate together with the first substrate seals the MEMS electrode.

First claim

Opening claim text (preview).

The invention claimed is: 1. A packaged capacitive micro-electro-mechanical system (MEMS) sensor device, comprising: at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell, said capacitive MEMS sensor cell including: a first substrate having a top side including a patterned dielectric layer thereon including a thick dielectric region and thin dielectric region, and a plurality of through-substrate vias (TSVs) including at least a first TSV and a second TSV exposed on a bottom side of said first substrate that extend a full thickness of said first substrate; a second substrate including a membrane layer bonded to said thick dielectric region and over said thin dielectric region to provide a MEMS cavity, said membrane layer including a fixed portion providing a fixed electrode and through-holes which release a first portion of said membrane layer over said MEMS cavity to provide a MEMS electrode, wherein said plurality of TSVs extend a full thickness of said second substrate including said first TSV through a top side of said MEMS electrode and said second TSV through a top side of said fixed electrode, and a patterned metal layer including a metal cap on a top of said first TSV and a metal cap on a top of said second TSV, and a third substrate having a bottom side including an inner cavity and outer protruding portions framing said inner cavity, wherein said third substrate is bonded with said outer protruding portions diffusion bonded to said thick dielectric regions, and wherein said third substrate together with said first substrate vacuum seals said MEMS electrode. 2. The packaged capacitive MEMS sensor device of claim 1 , wherein said MEMS electrode comprise single crystal silicon. 3. The packaged capacitive MEMS sensor device of claim 1 , wherein said plurality of TSVs comprise a dielectric liner and copper TSV filler material, and wherein said plurality of TSVs include protruding TSV tips that protrude from said bottom side of said first substrate. 4. The packaged capacitive MEMS sensor device of claim 1 , wherein said first substrate has a resistivity less than or equal to (≦) 0.1 Ω-cm, further comprising a patterned metal layer on said bottom side of said first substrate, wherein said first substrate provides a third electrode for said capacitive MEMS sensor cell to enable 3 dimensional (3D) capacitive sensing for said capacitive MEMS sensor device. 5. The packaged capacitive MEMS sensor device of claim 1 , wherein capacitive MEMS sensor device includes a plurality of capacitive MEMS sensor elements, wherein each of said plurality of capacitive MEMS sensor elements include a plurality of said capacitive MEMS sensor cells, and wherein said capacitive MEMS sensor elements are individually addressable by contacting a respective one of said first TSV. 6. The packaged capacitive MEMS sensor device of claim 5 , wherein each of said plurality of capacitive MEMS sensor cells in each of said plurality of capacitive MEMS sensor elements are connected in parallel by said membrane layer which couples together said MEMS electrode. 7. The packaged capacitive MEMS sensor device of claim 1 , a top side of said third substrate provides a top for said packaged capacitive MEMS sensor device.

Assignees

Inventors

Classifications

  • Tuning fork resonators · CPC title

  • Etching · CPC title

  • Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias · CPC title

  • Resonators; ultrasonic resonators · CPC title

  • Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

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What does patent US9470710B2 cover?
A packaged capacitive MEMS sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell including a first substrate having a thick and a thin dielectric region. A second substrate with a membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity. The membrane layer provides a fixed elec…
Who is the assignee on this patent?
Texas Instruments Inc
What technology area does this patent fall under?
Primary CPC classification G01P15/125. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 18 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).