Gas sensor

Patent metadata

Field	Value
Publication number	US-9250210-B2
Application number	US-201214366912-A
Country	US
Kind code	B2
Filing date	Dec 27, 2012
Priority date	Jan 13, 2012
Publication date	Feb 2, 2016
Grant date	Feb 2, 2016

Abstract

A gas sensor that can enhance gas detection sensitivity more than the conventional sensors with a simple configuration is proposed. An electric double layer including a gate insulating layer is formed in an ionic liquid (IL), a change of a state of the gate insulating layer in the ionic liquid (IL) that occurs by absorbing a gas is directly reflected in a source-drain current (I sd ) that flows in a carbon nanotube ( 8 ). Therefore, the gas detection sensitivity can be enhanced more than in the conventional sensors. Further, since the ionic liquid (IL) can be simply provided on a substrate ( 2 ) to be in contact with the carbon nanotube ( 8 ) and a gate electrode ( 7 ), the configuration that chemically modifies a surface of the carbon nanotube with a plurality of polymers as in the conventional gas sensors is not needed, and the configuration can be simplified correspondingly.

First claim

The invention claimed is:

1. A gas sensor that detects a gas that is a target of detection, comprising:
a carbon nanotube provided between a source electrode and a drain electrode on a substrate, and a source-drain current flows therein; and
a gas absorbing liquid disposed to cover the carbon nanotube,
wherein the gas is detected based on a change of the source-drain current in the carbon nanotube caused by absorbing the gas in the gas absorbing liquid,
wherein the gas absorbing liquid is in contact with the carbon nanotube and a gate electrode on the substrate to become a gate insulating layer, a state of the gate insulating layer changes by absorbing the gas, and the gas is detected based on a change of the source-drain current that occurs in response to the state of the gate insulating layer,
wherein the gate electrode is configured by a first gate electrode portion and a second gate electrode portion, and the carbon nanotube is disposed between the first gate electrode portion and the second gate electrode portion, and the gas absorbing liquid is disposed to be in contact with the first gate electrode portion and the second gate electrode portion, and
wherein the gas absorbing liquid is held in a gap formed between the first gate electrode portion and the second gate electrode portion.

2. The gas sensor according to claim 1 ,
wherein holding means covering the gas absorbing liquid, and holding the gas absorbing liquid on the substrate is provided.

3. The gas sensor according to claim 1 ,
wherein the gas is detected based on a change of a gate voltage of the gate electrode that changes in response to the source-drain current.

4. The gas sensor according to any claim 1 ,
wherein the gas absorbing liquid is an ionic liquid.

5. The gas sensor according to claim 1 , wherein the gas absorbing liquid is a hydroxide aqueous solution of an alkali metal and an alkaline earth metal.

Assignees

• Univ Tokyo
• Omron Tateisi Electronics Co

Inventors

• Shimoyama Isao
• Matsumoto Kiyoshi
• Takei Yusuke
• Takahashi Hidetoshi
• KIGA Noboru
• Honda Masahito

Classifications

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• G01N33/0054

  Ammonia · CPC title

• G01N27/4146

  involving nanosized elements, e.g. nanotubes, nanowires · CPC title

• G01N27/4141 Primary

  specially adapted for gases · CPC title

• G01N27/48 Primary

  using polarography, i.e. measuring changes in current under a slowly-varying voltage · CPC title