Method of extracting properties of a layer on a wafer
US-2024234216-A9 · Jul 11, 2024 · US
US9470640B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9470640-B2 |
| Application number | US-201615042598-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2016 |
| Priority date | Sep 28, 2011 |
| Publication date | Oct 18, 2016 |
| Grant date | Oct 18, 2016 |
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A defect inspection method and device for irradiating a linear region on a surface-patterned sample mounted on a table, with illumination light from an inclined direction to the sample, next detecting in each of a plurality of directions an image of the light scattered from the sample irradiated with the illumination light, then processing signals obtained by the detection of the images of the scattered light, and thereby detecting a defect present on the sample; wherein the step of detecting the scattered light image in the plural directions is performed through oval shaped lenses in which elevation angles of the optical axes thereof are different from each other, within one plane perpendicular to a plane formed by the normal to the surface of the table on which to mount the sample and the longitudinal direction of the linear region irradiated with the irradiation light.
Opening claim text (preview).
What is claimed is: 1. A defect inspection device, comprising: an irradiation unit that irradiates a surface-patterned sample with light from an inclined direction relative to the surface of the sample; a detection unit that includes a plurality of detection optical systems to detect respectively a plurality of portions of scattered light coming from the surface of the sample irradiated with light by the irradiation unit; and a processing unit that processes a plurality of sig…
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