Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium

Patent metadata

Field	Value
Publication number	US-9466506-B2
Application number	US-201213705336-A
Country	US
Kind code	B2
Filing date	Dec 5, 2012
Priority date	Aug 15, 2006
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The inside of a shower head having gas-jetting pores for supplying a gas to a substrate is partitioned into a center section from which a gas is supplied to the center portion of a substrate, and a peripheral section from which a gas is supplied to the peripheral portion of the substrate, and the same process gas is supplied to the substrate from these two sections at flow rates separately regulated. The distance from the center of the center section of the gas supply unit to the outermost gas-jetting pores in the center section is set 53% or more of the radius of the substrate. Moreover, an additional gas is further supplied to the peripheral portion of the substrate.

First claim

The invention claimed is:

1. A method of processing a substrate having a silicon nitride film thereon by the use of a substrate processing system comprising:
a processing vessel,
a table that is placed in the processing vessel and on which a substrate will be placed, and
a gas supply unit set on the top of the processing vessel facing the table, the gas supply unit including a center section that corresponds to a center portion of the substrate and that has a plurality of gas-jetting pores, and a peripheral section that corresponds to a peripheral portion of the substrate and that has a plurality of gas-jetting pores,
the method comprising the steps of:
supplying to the substrate, from the center and peripheral sections of the gas supply unit, a common process gas at flow rates separately regulated,
supplying, in addition to the common process gas, an additional gas from the peripheral section of the gas supply unit to the substrate peripheral portion, and
evacuating the processing vessel, wherein
the distance from the center of the center section of the gas supply unit to the outermost gas-jetting pores in the center section is 53%-80% of the radius of the substrate,
the common process gas contains an etching gas and a gas having the property of depositing on the substrate and including a compound containing carbon and hydrogen, and
the additional gas is a gas of a compound having a property of depositing on the substrate and containing carbon and hydrogen or nitrogen gas having the property of protecting side faces of projections on the substrate.

2. The method of substrate processing according to claim 1 , wherein the step of supplying the common process gas from the center and peripheral sections of the gas supply unit is a step in which plural gases supplied from a plurality of gas supply sources are mixed, and the gas mixture is divided into two streams and supplied as the common process gas from the center and peripheral sections separately.

3. The method of substrate processing according to claim 1 , wherein the ratio of the flow rate of the common process gas to that of the additional gas in the center section is the same as said ratio in the peripheral section.

4. The method of substrate processing according to claim 3 , wherein the additional gas having the property of protecting the side faces of the projections is nitrogen gas.

5. The method of substrate processing according to claim 1 , wherein the etching gas is for etching the silicon nitride film on the substrate.

6. The method of substrate processing according to claim 1 , wherein the method makes lines in a thin film on the substrate by etching.

7. The method of substrate processing according to claim 1 , wherein the pressure at which the substrate is processed in the processing vessel is regulated to 1.3-40 Pa.

Assignees

• Tokyo Electron Ltd

Inventors

• Masuda Noriiki

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H01L21/3086 Primary

  Electricity · mapped topic

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01L21/31116

  Electricity · mapped topic