Sapphire substrate

Patent metadata

Field	Value
Publication number	US-9464365-B2
Application number	US-201414174602-A
Country	US
Kind code	B2
Filing date	Feb 6, 2014
Priority date	Dec 28, 2006
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm 2 , wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

First claim

What is claimed is:

1. A sapphire substrate having:
a ratio of diameter:thickness not less than 124:1; and
a major surface having a property, wherein the property includes:
a normalized bow of the major surface is not greater than 0.100 μm/cm 2 , wherein the normalized bow is a bow measurement of the major surface normalized for a surface area of the major surface;
a normalized flatness of the major surface is not greater than 0.100 μm/cm 2 , wherein the normalized flatness is a flatness measurement of the major surface normalized for a surface area of the major surface;
a normalized warp of the major surface is not greater than about 0.190 μm/cm 2 , wherein the normalized warp is a warp measurement of the major surface normalized for a surface area of the major surface; or
any combination thereof.

2. The sapphire substrate of claim 1 , wherein the sapphire substrate has a diameter not less than 6.5 cm.

3. The sapphire substrate of claim 1 , wherein the property includes the normalized bow not greater than 0.100 μm/cm 2 .

4. The sapphire substrate of claim 1 , wherein the property includes the normalized flatness not greater than 0.100 μm/cm 2 .

5. The sapphire substrate of claim 1 , wherein the property includes the normalized warp not greater than about 0.190 μm/cm 2 .

6. The sapphire substrate of claim 1 , wherein the property includes the normalized bow not greater than 0.100 μm/cm 2 , and the normalized flatness is not greater than 0.100 μm/cm 2 .

7. The sapphire substrate of claim 1 , wherein the property includes the normalized bow not greater than 0.100 μm/cm 2 , and the normalized warp is not greater than about 0.190 μm/cm 2 .

8. The sapphire substrate of claim 1 , wherein the property includes the normalized flatness not greater than 0.100 μm/cm 2 , and the normalized warp not greater than about 0.190 μm/cm 2 .

9. The sapphire substrate of claim 1 , wherein the property includes:
the normalized bow not greater than 0.100 μm/cm 2 ;
the normalized flatness not greater than 0.100 μm/cm 2 ; and
the normalized warp not greater than about 0.190 μm/cm 2 .

10. The sapphire substrate of claim 1 , wherein a crystallographic orientation of the sapphire substrate is a c-plane orientation.

11. The sapphire substrate of claim 10 , wherein the generally planar surface of the sapphire substrate is tilted away from the c-plane at a tilt angle of not greater than about 2.0°.

12. The sapphire substrate of claim 1 , wherein the property further comprises a normalized total thickness variation not greater than 0.037 μm/cm 2 , wherein normalized total thickness variation is a total thickness variation of the first surface normalized for a surface area of the first surface.

13. The sapphire substrate of claim 1 , wherein the sapphire substrate has a surface roughness not greater than 100.0 Å.

14. The sapphire substrate of claim 1 , wherein the ratio of diameter:thickness is not greater than 216:1.

15. The sapphire substrate of claim 14 , wherein the sapphire substrate has a diameter not greater than 4 inches.

16. A sapphire substrate having:
a generally planar surface along the c-plane or tilted away from the c-plane at a tilt angle of not greater than about 2.0°;
diameter of at least 7.5 cm;
a ratio of diameter:thickness not less than 124:1; and
a major surface having at least two properties, wherein the at least two properties are selected from a group consisting of:
a normalized bow of the major surface is not greater than 0.100 μm/cm 2 , wherein the normalized bow is a bow measurement of the major surface normalized for a surface area of the major surface;
a normalized flatness of the major surface is not greater than 0.100 μm/cm 2 , wherein the normalized flatness is a flatness measurement of the major surface normalized for a surface area of the major surface; and
a normalized warp of the major surface is not greater than about 0.190 μm/cm 2 , wherein the normalized warp is a warp measurement of the major surface normalized for a surface area of the major surface.

17. The sapphire substrate of claim 16 , wherein the at least two properties includes the normalized bow not greater than 0.100 μm/cm 2 , and the normalized warp is not greater than about 0.190 μm/cm 2 .

18. The sapphire substrate of claim 16 , wherein the at least two properties includes the normalized flatness not greater than 0.100 μm/cm 2 , and the normalized warp not greater than about 0.190 μm/cm 2 .

19. The sapphire substrate of claim 16 , wherein the at least two properties include:
the normalized bow not greater than 0.100 μm/cm 2 ;
the normalized flatness not greater than 0.100 μm/cm 2 ; and
the normalized warp not greater than about 0.190 μm/cm 2 .

20. The sapphire substrate of claim 1 , wherein the at least two properties further includes a surface roughness not greater than 100.0 Å.

Assignees

• Saint-Gobain Ceram & Plastics Inc

Inventors

• Tanikella Brahmanandam V
• Chinnakaruppan Palaniappan
• Rizzuto Robert A
• Cherian Isaac K
• Vedantham Ramanujam
• Simpson Matthew A

Classifications

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• B24B7/228

  for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title

• B24B27/0633

  using a cutting wire · CPC title

• H01L21/0242

  Electricity · mapped topic