Adjustable process spacing, centering, and improved gas conductance

US9464349B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9464349-B2
Application numberUS-201414187585-A
CountryUS
Kind codeB2
Filing dateFeb 24, 2014
Priority dateJan 29, 2010
Publication dateOct 11, 2016
Grant dateOct 11, 2016

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

First claim

Opening claim text (preview).

The invention claimed is: 1. A shield for encircling a sputtering target, comprising: a base plate; a cylindrical outer band having a first diameter, the cylindrical outer band vertically extending a first distance from the base plate to a top end; a cylindrical inner band having a second diameter less than the first diameter, the cylindrical inner band vertically extending from the base plate a second distance less than the first distance; and at least one centering mechanism disposed on an inner periphery of the cylindrical inner band and extending radially inward and perpendicular to the cylindrical inner band, wherein the centering mechanism comprises a ball disposed on the inner periphery of the cylindrical inner band. 2. The shield of claim 1 , wherein the cylindrical outer band and the cylindrical inner band are substantially perpendicular to the base plate. 3. The shield of claim 1 , wherein the first distance is between about 5 inches and about 7 inches. 4. The shield of claim 1 , wherein the second distance is between about 1.5 inches to about 4 inches. 5. The shield of claim 1 , wherein the first diameter is between about 16 inches and about 18 inches. 6. The shield of claim 1 , wherein the second diameter is between about 14 inches and about 16 inches. 7. The shield of claim 1 , wherein the base plate, cylindrical outer band, and cylindrical inner band comprise a unitary structure. 8. The shield of claim 7 , wherein the unitary structure is made from aluminum or stainless steel. 9. The shield of claim 1 , wherein six centering mechanisms are evenly distributed around the second diameter. 10. The shield of claim 9 , wherein each of the centering mechanisms are positioned a uniform distance from a top of the cylindrical inner band. 11. The shield of claim 1 , wherein a sloped step extends from a top portion of the cylindrical outer band radially beyond the first diameter. 12. The shield of claim 11 , wherein a mounting flange extends radially outward from the sloped step. 13. A shield for a physical vapor deposition chamber, comprising: a cylindrical outer band; a cylindrical inner band; a base plate coupling the cylindrical inner and outer bands for forming a single piece unitary member; and a plurality of balls coupled to an inner periphery of the cylindrical inner band, wherein each ball of the plurality of balls is disposed within a centering mechanism, with each centering mechanism extending radially inward and perpendicular to the cylindrical inner band. 14. The shield of claim 13 , wherein the balls comprise a sapphire material. 15. The shield of claim 14 , further comprising: a plurality of cylindrical holders, each holder having a respective one of the balls inserted therein, the cylindrical holders disposed in holes formed in the cylindrical inner band. 16. The shield of claim 15 , wherein the holes are evenly spaced around the cylindrical inner band. 17. The shield of claim 16 , wherein the holes are positioned a uniform distance from a top of the cylindrical inner band. 18. The shield of claim 13 , wherein an upper portion of the cylindrical outer band is sized to surround a sputtering target and a bottom portion of the cylindrical outer band is sized to surround a substrate support. 19. The shield of claim 13 , wherein the cylindrical outer band and the cylindrical inner band are substantially perpendicular to the base plate.

Assignees

Inventors

Classifications

  • characterised by edge clamping, e.g. clamping ring · CPC title

  • the wafers being placed on a susceptor, stage or support · CPC title

  • C23C14/564Primary

    Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title

  • characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title

  • Semiconductor component · CPC title

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Frequently asked questions

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What does patent US9464349B2 cover?
Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatabi…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C14/564. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 11 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).