Image sensing device with interconnect layer gap

Patent metadata

Field	Value
Publication number	US-9455292-B2
Application number	US-201514741561-A
Country	US
Kind code	B2
Filing date	Jun 17, 2015
Priority date	Oct 11, 2014
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.

First claim

That which is claimed is:

1. An image sensing device comprising:
an interconnect layer;
an image sensor integrated circuit (IC) coupled to said interconnect layer and having an image sensing surface opposite said interconnect layer;
an infrared (IR) filter aligned with the image sensing surface;
a lens assembly aligned with said IR filter;
a flexible interconnect layer aligned with said interconnect layer and comprising
a flexible substrate extending laterally outwardly f…

Assignees

• St Microelectronics Pte Ltd

Inventors

• Luan Jing-En

Classifications

• H10W72/5366

  Electricity · mapped topic

• H10W72/884

  Electricity · mapped topic

• H10F39/806

  Electricity · mapped topic

• H10F39/804

  Electricity · mapped topic

• H10F39/024

  Electricity · mapped topic