Semiconductor device with schottky diode and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9455248-B2
Application number	US-201314011071-A
Country	US
Kind code	B2
Filing date	Aug 27, 2013
Priority date	May 23, 2013
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A semiconductor device with an embedded schottky diode and a manufacturing method thereof are provided. A semiconductor device having a schottky diode include: an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer.

First claim

What is claimed is:

1. A semiconductor device having a schottky diode, the semiconductor device comprising:
an epitaxial layer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order;
a gate trench extending from the source layer to a part of the epitaxial layer;
a body trench formed at a predetermined distance from the gate trench and extending from the source layer to a part of the epitaxial layer;
a barrier metal formed along an inner wall of the body trench;
a source metal formed on the barrier metal; and
a guard ring of the second conductivity type contacting the barrier metal and formed in the epitaxial layer, and
wherein a bottom surface of the body trench is in direct contact with the epitaxial layer, such that the bottom surface of the body trench forms a schottky contact with the epitaxial layer, and a portion of the guard ring is formed below a junction between the body layer and the epitaxial layer.

2. The semiconductor device of claim 1 , wherein the gate trench comprises:
a gate polysilicon formed within the gate trench; and
a gate insulating layer that surrounds the gate polysilicon.

3. The semiconductor device of claim 1 , wherein the guard ring protrudes into both the epitaxial layer and the body layer.

4. The semiconductor device of claim 1 , wherein the guard ring has a doping ion implant dose equal to that of the body layer.

5. The semiconductor device of claim 1 , further comprising a second conductivity type body diffusion region formed in the body layer and contacts an outer wall of the body trench.

6. The semiconductor device of claim 5 , wherein the body diffusion region contacts a lower surface of the source layer.

7. The semiconductor device of claim 1 , wherein the barrier metal is selected from a group consisting of Co, Ta, Mo, Ti, Pt, W, Ni and TiN.

8. The semiconductor device of claim 1 , wherein a bottom of the barrier metal forms a schottky contact with the epitaxial layer.

9. The semiconductor device of claim 1 , wherein the guard ring contacts a side wall of the barrier metal.

10. A semiconductor device with a schottky diode, the semiconductor device comprising:
a semiconductor substrate having a top surface;
an epitaxial layer of a first conductivity type, a body layer of a second conductivity type, a source layer of the first conductivity type arranged in that order on the semiconductor substrate;
a gate trench extending from the source layer to a part of the epitaxial layer;
a first body trench and a second body trench formed at a predetermined distance from the gate trench and extending into the semiconductor device with respect to the top surface of the substrate, the first body trench and the second body trench having different depths with respect to the top surface of the substrate; and
a first guard ring of the second conductivity type contacting an outer wall of the first body trench and formed in the epitaxial layer, and
wherein a bottom surface of the first body trench is in direct contact with the epitaxial layer, such that the bottom surface of the first body trench forms a schottky contact with the epitaxial layer, and a portion of the guard ring is formed below a junction between the body layer and the epitaxial layer.

11. The semiconductor device of claim 10 , wherein the gate trench comprises:
a gate polysilicon formed within the gate trench; and
a gate insulating layer that surrounds the gate polysilicon.

12. The semiconductor device of claim 10 , wherein the first body trench extends from the source layer to a part of the epitaxial layer in a direction perpendicular to an upper surface of the source layer, and
the second body trench extends from the source layer to a part of the body layer in a direction perpendicular to the upper surface of the source layer.

13. The semiconductor device of claim 10 , wherein the first guard ring protrudes into both the epitaxial layer and the body layer.

14. The semiconductor device of claim 10 , further comprising a second guard ring of the second conductivity type that contacts an outer wall of the second body trench and formed in the body layer.

15. The semiconductor device of claim 14 , wherein the first and second guard rings have doping concentrations that are equal to a doping concentration of the body layer.

16. The semiconductor device of claim 10 , further comprising a body diffusion region of the second conductivity type formed in the body layer to contact an outer wall of the first and second body trenches.

17. The semiconductor device of claim 16 , wherein the body diffusion region contacts a lower surface of the source layer.

18. The semiconductor device of claim 16 , further comprising a second guard ring of the second conductivity type formed in the body layer and contacts an outer wall of the second body trench.

19. The semiconductor device of claim 18 , wherein the first and second guard rings have doping concentrations that are equal to a doping concentration of the body layer.

20. The semiconductor device of claim 18 , wherein the body diffusion region and the second guard ring are merged with each other.

21. The semiconductor device of claim 10 , further comprising a barrier metal located along an inner wall of the first body trench.

22. The semiconductor device of claim 21 , wherein a bottom of the barrier metal forms a schottky contact.

23. The semiconductor device of claim 21 , wherein the second guard ring contacts a side wall of the barrier metal.

24. A semiconductor device having a schottky diode, the semiconductor device comprising:
a substrate having a top surface;
a semiconductor layer of a first conductivity type, a body layer of a second conductivity type formed in the substrate;
a gate trench extending from the top surface to a part of the semiconductor layer;
a body trench formed at a predetermined distance from the gate trench and extending from the top surface to a part of the semiconductor layer; and
a guard ring of the second conductivity type contacting a side wall of the body trench and formed in the semiconductor layer, and
wherein a bottom surface of the body trench is in direct contact with the semiconductor layer, such that the bottom surface of the body trench forms a schottky contact with the semiconductor layer, and
wherein a portion of the guard ring formed below a junction created between the body layer and the semiconductor layer.

25. The semiconductor device of claim 24 , further comprising a barrier metal located along an inner wall of the body trench.

26. The semiconductor device of claim 25 , wherein the guard ring contacts a side wall of the barrier metal.

27. The semiconductor device of claim 24 , further comprising a second conductivity type body diffusion region formed in the body layer and contacts the side wall of the body trench.

28. The semiconductor device of claim 27 , wherein the body diffusion region has a higher doping concentration than that of the guard ring.

29. The semiconductor device of claim 24 , wherein the body trench comprises a first body trench and a second body trench formed a predetermined distance from the gate trench, and wherein at least one of the first body trench and the second body trench comprises a non-schottky contact.

Assignees

• Magnachip Semiconductor Ltd

Inventors

• Hebert Francois

Classifications

• H10D64/661

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation (having lateral variation in the gate structure H10D64/671) · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/257

  for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D64/01

  Manufacture or treatment · CPC title