Dielectric film and dielectric element

Patent metadata

Field	Value
Publication number	US-9455087-B2
Application number	US-201514833614-A
Country	US
Kind code	B2
Filing date	Aug 24, 2015
Priority date	Sep 12, 2014
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba 1-x Ca x ) z (Ti 1-y Zr y )O 3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z<0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°≦2θ c −2θ t <0.20° between (001) plane diffraction peak position 2θ t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2θ c of a cubic structure represented by the general formula.

First claim

What is claimed is:

1. A dielectric film comprising:
a dielectric composition as a main component, the dielectric composition being represented by the general formula (Ba 1-x Ca x ) z (Ti 1-y Zr y )O 3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z<0.995, and
sub-components V 2 O 5 and at least one or more of MnO and CuO;
wherein in an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°≦2θ c -2θ t <0.20° between (001) plane diffraction peak position 2θ t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2θ c of a cubic structure represented by the general formula.

2. The dielectric film according to claim 1 , wherein x and y of the general formula are within the ranges of 0.001≦x≦0.100 and 0.001≦y≦0.100, respectively.

3. The dielectric film according to claim 1 , wherein a total content of MnO and CuO as the sub-components is 0.010 mol to 1.000 mol relative to 100 mol of the main component in the dielectric film, and a content of V 2 O 5 is 0.050 mol to 1.000 mol.

4. A dielectric element comprising:
the dielectric film according to claim 1 ; and
an electrode.

5. The dielectric film according to claim 2 , wherein a total content of MnO and CuO as the sub-components is 0.010 mol to 1.000 mol relative to 100 mol of the main component in the dielectric film, and a content of V 2 O 5 is 0.050 mol to 1.000 mol.

6. A dielectric element comprising:
the dielectric film according to claim 2 ; and an electrode.

7. A dielectric element comprising:
the dielectric film according to claim 3 ; and
an electrode.

8. A dielectric element comprising:
the dielectric film according to claim 5 ; and
an electrode.

Assignees

• Tdk Corp

Inventors

• Takeda Saori
• Furukawa Masahito
• Kosuda Masanori
• Sezai Yuji

Classifications

• H01G4/10 Primary

  Metal-oxide dielectrics {(H01G4/085 takes precedence)} · CPC title

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01G4/20

  using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 (H01G4/12 takes precedence) · CPC title

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title