Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-9450151-B2
Application number	US-201514717942-A
Country	US
Kind code	B2
Filing date	May 20, 2015
Priority date	Sep 2, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

First claim

What is claimed is:

1. A semiconductor light-emitting device, comprising:
a laminated semiconductor structure including a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
a first electrode disposed on the first surface of the laminated semiconductor structure and connected to the first conductivity-type semiconductor layer;
a second electrode disposed on a majority of the second surface of the laminated semiconductor structure and connected to the second conductivity-type semiconductor layer;
a connecting electrode connected to the second electrode and extending to the first surface of the laminated semiconductor structure;
a support substrate disposed on the second electrode; and
an insulating layer disposed to insulate the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

2. The semiconductor light-emitting device of claim 1 , wherein the second electrode includes a light-transmissive electrode, and the support substrate includes a light-transmissive substrate.

3. The semiconductor light-emitting device of claim 2 , wherein the first electrode includes a reflective electrode.

4. The semiconductor light-emitting device of claim 3 , further comprising first and second conductive bumps respectively disposed on portions of the first electrode and the connecting electrode on the first surface.

5. The semiconductor light-emitting device of claim 1 , wherein the laminated semiconductor structure includes a through-hole extending from the first surface to the second surface to expose a portion of the second electrode, and
the connecting electrode is connected to the exposed portion of the second electrode, disposed on an inner sidewall of the through-hole, and extends to the first surface of the laminated semiconductor structure.

6. The semiconductor light-emitting device of claim 5 , further comprising an etch-stop layer disposed on the portion of the second electrode connected to the through-hole.

7. The semiconductor light-emitting device of claim 6 , wherein the etch-stop layer includes a conductive material and is disposed between the second electrode and the support substrate.

8. The semiconductor light-emitting device of claim 7 , wherein at least a section of the portion of the second electrode is removed to expose a portion of the etch-stop layer, and the connecting electrode is connected to the exposed portion of the etch-stop layer.

9. The semiconductor light-emitting device of claim 7 , further comprising at least one finger electrode connected to the etch-stop layer and extending into a space between the second electrode and the support substrate.

10. The semiconductor light-emitting device of claim 6 , wherein the etch-stop layer includes an insulating material, and is located to surround the exposed portion of the second electrode.

11. The semiconductor light-emitting device of claim 6 , further comprising a planarization layer located between the second electrode and the support substrate, and having a planarized surface bonded to the support substrate.

12. The semiconductor light-emitting device of claim 5 , wherein the insulating layer is disposed on the inner sidewall of the through-hole and extends to the first surface of the laminated semiconductor structure.

13. The semiconductor light-emitting device of claim 12 , wherein the insulating layer extends to cover a portion of the first electrode, and
the connecting electrode extends onto the extending portion of the insulating layer.

14. The semiconductor light-emitting device of claim 1 , further comprising an insulating member surrounding side surfaces of the laminated semiconductor structure.

15. The semiconductor light-emitting device of claim 14 , wherein the connecting electrode is disposed on the side surfaces of the laminated semiconductor structure, and
the insulating layer is disposed between the connecting electrode and the side surfaces of the laminated semiconductor structure.

16. The semiconductor light-emitting device of claim 14 , wherein the insulating member includes a light-transmissive adhesive material and is disposed between the second surface of the laminated semiconductor structure and the support substrate to bond the laminated semiconductor structure to the support substrate.

17. The semiconductor light-emitting device of claim 1 , further comprising an electrode protection layer disposed between the second electrode and the support substrate and configured to protect the second electrode.

18. The semiconductor light-emitting device of claim 1 , wherein the first conductivity-type semiconductor layer is an n-type semiconductor layer and the second conductivity-type semiconductor layer is a p-type semiconductor layer.

19. A semiconductor light-emitting device, comprising:
a laminated semiconductor structure including a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
a first electrode disposed on the first surface of the laminated semiconductor structure and connected to the first conductivity-type semiconductor layer;
a second electrode disposed on a majority of the second surface of the laminated semiconductor structure, connected to the second conductivity-type semiconductor layer, and formed of a light-transmissive electrode;
a connecting electrode connected to the second electrode to extend to the first surface of the laminated semiconductor structure, wherein a portion of the connecting electrode disposed on the first surface is provided as a pad area;
a light-transmissive substrate disposed on the second electrode; and
an insulating layer disposed to insulate the connecting electrode from the active layer and the first conductivity-type semiconductor layer,
wherein the insulating layer extends to cover a portion of the first electrode, and the pad area of the connecting electrode is disposed on the extended portion of the insulating layer.

20. The semiconductor light-emitting device of claim 19 , wherein the connecting electrode is disposed on side surfaces of the laminated semiconductor structure, and the insulating layer is disposed between the connecting electrode and the side surfaces of the laminated semiconductor structure, and
further comprising an insulating member surrounding the side surfaces and the first surface of the laminated semiconductor structure and formed of a light-transmissive adhesive material to be bonded to the light-transmissive substrate.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Pun Jae
• Park Young Soo
• Ryu Yung Ho
• Park Tae Young
• Hong Jin Gi

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/835

  Reflective materials · CPC title