Electrodeposition of thin-film cells containing non-toxic elements
US-9085829-B2 · Jul 21, 2015 · US
US9450136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9450136-B2 |
| Application number | US-201514699137-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 29, 2015 |
| Priority date | Aug 31, 2010 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
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A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.
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What is claimed is: 1. A method of manufacturing a thin-film cell, the method comprising: providing a substrate; depositing an absorber layer onto the substrate; and depositing a buffer layer onto the absorber layer, wherein the absorber layer and the buffer layer are made from non-toxic materials; wherein the depositing the absorber layer and the buffer layer is performed using an electrochemical atomic layer deposition process carried out under illumination so as excite electrons from a valence band to a conduction band, wherein the electrons at an edge of the conduction band at a solid/liquid interface are energetically higher than that of a redox potential of S 2 O 3 2− /ZnS; and wherein the step of depositing the absorber layer onto the substrate is carried out by depositing a thin-film of Cu 2 ZnSnS 4 using an electrochemical deposition process, wherein sulfur is contained in a solution used in the process. 2. The method of claim 1 , wherein the step of depositing the absorber layer onto the substrate is carried out using a single-step bulk electrochemical deposition process. 3. The method of claim 1 , wherein the step of depositing the absorber layer onto the substrate is carried out using multiple-layer electrochemical deposition. 4. The method of claim 1 , wherein the step of depositing the absorber layer onto the substrate is carried out using a single-step bulk electrochemical deposition process and wherein the electrochemical deposition process used to deposit the buffer layer is a multiple layer electrochemical deposition process.
containing more than 50% by weight of copper · CPC title
comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4 · CPC title
Active materials · CPC title
Annealing · CPC title
Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title
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