Low noise CdHgTe photodiode array

Patent metadata

Field	Value
Publication number	US-9450013-B2
Application number	US-201514795129-A
Country	US
Kind code	B2
Filing date	Jul 9, 2015
Priority date	Jul 16, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A planar photodiode array including a useful layer made of Cd x Hg 1-x Te. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

First claim

The invention claimed is:

1. A planar photodiode array comprising a useful layer made of a cadmium, mercury and tellurium semi-conductor alloy of Cd x Hg 1-x Te type, the useful layer having a lower face and an upper face on the side opposite to the lower face;
wherein:
the useful layer comprises at least two superimposed doped layers, each interface between two adjacent doped layers forming a PN junction which extends over the whole extent of the useful layer;
the useful layer has at least one region designated separation region, extending from the upper face of the useful layer towards the lower face while going through said PN junction, the separation region separating at least two volumes, designated useful volumes which extend into the useful layer as deeply as the separation region; and
the average cadmium concentration in the separation region is greater than the average cadmium concentration in a remainder of the useful layer.

2. The photodiode array according to claim 1 , wherein the useful layer consists of two doped layers each having a doping of different nature.

3. The photodiode array according to claim 1 , wherein the useful layer consists of three doped layers forming together two PN junctions, two doped layers having a doping of same nature flanking a median doped layer having a doping of different nature, and the separation region passing through the two PN junctions.

4. The photodiode array according to claim 1 , wherein the separation region has a cadmium gradient decreasing from the upper face of the useful layer and in the direction of its lower face.

5. The photodiode array according to claim 1 , wherein the separation region is separated from the lower face of the useful layer by at least one portion of said useful layer.

6. The photodiode array according to claim 1 , wherein the useful volumes are spread out in the useful layer according to a regular lattice pattern.

7. The photodiode array according to claim 6 , wherein the useful volumes are spread out in the useful layer according to a square lattice pattern, and separated from each other by a single separation region.

8. The photodiode array according to claim 1 , comprising at least one over-doped zone, situated in a region formed by the intersection between a separation region and the doped layer situated on the side of the upper face of the useful layer, designated upper doped layer, the over-doped zone having a doping of type opposite to that of said upper doped layer.

Assignees

• Commissariat Energie Atomique

Inventors

• Mollard Laurent
• Boulard Francois
• Bourgeois Guillaume

Classifications

• H10F71/1253

  comprising at least three elements, e.g. HgCdTe · CPC title

• H10F39/8027

  Geometry of the photosensitive area · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title

• H10F39/107

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

• H10F39/103

  the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title