Manufacturing method of magnetic memory device

Patent metadata

Field	Value
Publication number	US-9449892-B2
Application number	US-201514636984-A
Country	US
Kind code	B2
Filing date	Mar 3, 2015
Priority date	Sep 4, 2014
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

According to one embodiment, a manufacturing method of a magnetic memory device, includes obtaining first and second magnetic fields for each of magnetoresistive effect elements, defining a group of the elements, for the first and second magnetic fields of the elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference, determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field, and obtaining magnetic characteristics for each of the elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

First claim

What is claimed is:

1. A manufacturing method of a magnetic memory device comprising a plurality of magnetoresistive effect elements, each of which comprises a storage layer, a reference layer and a tunnel barrier layer provided between the storage layer and the reference layer, when an applied magnetic field is increased, the plurality of magnetoresistive effect elements being in a first resistance state if the applied magnetic field is lower than a first magnetic field, the plurality of magnetoresistive effect elements being in a second resistance state having a resistance greater than a resistance of the first resistance state if the applied magnetic field is higher than the first magnetic field and lower than a second magnetic field, and the plurality of magnetoresistive effect elements being in a third resistance state having a resistance less than the resistance of the second resistance state if the applied magnetic field is higher than the second magnetic field,
the method comprising:
obtaining the first and second magnetic fields for each of the plurality of magnetoresistive effect elements;
defining a group of the plurality of magnetoresistive effect elements, for the first and second magnetic fields of the plurality of magnetoresistive effect elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference;
determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field; and
obtaining magnetic characteristics for each of the plurality of magnetoresistive effect elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

2. The method of claim 1 , wherein
a magnetization direction of the storage layer is parallel to a magnetization direction of the reference layer in the first and third resistance states, and
the magnetization direction of the storage layer is antiparallel to the magnetization direction of the reference layer in the second resistance state.

3. The method of claim 1 , wherein
the defining the group of the plurality of magnetoresistive effect elements comprises:
determining the lowest second magnetic field from the obtained second magnetic fields; and
selecting a magnetoresistive effect element in which the obtained first magnetic field is lower than the lowest second magnetic field, and a difference between the obtained first magnetic field and the lowest second magnetic field is greater than the predetermined difference.

4. The method of claim 1 , wherein
the defining the group of the plurality of magnetoresistive effect elements comprises:
determining the highest first magnetic field from the obtained first magnetic fields; and
selecting a magnetoresistive effect element in which the obtained second magnetic field is higher than the highest first magnetic field, and a difference between the obtained second magnetic field and the highest first magnetic field is greater than the predetermined difference.

5. The method of claim 1 , wherein
the obtaining the magnetic characteristics comprising obtaining magnetic hysteresis characteristics.

6. The method of claim 1 , further comprising
defining a new group of the plurality of magnetoresistive effect elements which do not belong to the group, wherein for the first and second magnetic fields of the plurality of magnetoresistive effect elements in the new group, a new highest first magnetic field is lower than a new lowest second magnetic field, and a difference between the new highest first magnetic field and the new lowest second magnetic field is greater than a predetermined difference;
determining a new maximum applied magnetic field which is higher than the new highest first magnetic field and lower than the new lowest second magnetic field; and
obtaining magnetic characteristics for each of the plurality of magnetoresistive effect elements in the new group by applying a magnetic field decreasing from the new maximum applied magnetic field after the magnetic field is increased up to the new maximum applied magnetic field.

7. The method of claim 1 , wherein
the plurality of magnetoresistive effect elements further comprise a shift cancelling layer, and
the reference layer is provided between the tunnel barrier layer and the shift cancelling layer.

8. The method of claim 1 , wherein
the plurality of magnetoresistive effect elements further comprise a shift cancelling layer, and
the storage layer is provided between the tunnel barrier layer and the shift cancelling layer.

9. The method of claim 1 , further comprising
producing the plurality of magnetoresistive effect elements before the obtaining the first and second magnetic fields for each of the magnetoresistive effect elements.

10. The method of claim 1 , further comprising
producing a plurality of new magnetoresistive effect elements based on the obtained magnetic characteristics after the obtaining the magnetic characteristics.

11. The method of claim 1 , further comprising
adjusting an operation parameter of the plurality of magnetoresistive effect elements based on the obtained magnetic characteristics after the obtaining the magnetic characteristics.

12. A manufacturing method of a magnetic memory device comprising a plurality of magnetoresistive effect elements, each of which comprises a storage layer, a reference layer and a tunnel barrier layer provided between the storage layer and the reference layer, when an applied magnetic field is increased, the plurality of magnetoresistive effect elements being in a first resistance state if the applied magnetic field is lower than a first magnetic field, the plurality of magnetoresistive effect elements being in a second resistance state having a resistance greater than a resistance of the first resistance state if the applied magnetic field is higher than the first magnetic field and lower than a second magnetic field, and the plurality of magnetoresistive effect elements being in a third resistance state having a resistance less than the resistance of the second resistance state if the applied magnetic field is higher than the second magnetic field,
the method comprising:
increasing a magnetic field applied to the plurality of magnetoresistive effect elements to obtain an applied magnetic field at a time of shifting for a specific magnetoresistive effect element first shifted from the first resistance state to the second resistance state;
increasing the magnetic field applied to the plurality of magnetoresistive effect elements up to a maximum applied magnetic field higher than the applied magnetic field at the time of shifting;
defining a group of the plurality of magnetoresistive effect elements, the group comprising the specific magnetoresistive effect element and a magnetoresistive effect element shifted from the first resistance state to the second resistance state by arrival to the maximum applied magnetic field; and
obtaining magnetic characteristics for each of the plurality of magnetoresistive effect elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

13. The method of claim 12 , wherein
a magnetization direction of the storage layer is parallel to a magnetization direction of the reference layer in the first and third resistance states,

Assignees

• Aikawa Hisanori
• Iwayama Masayoshi
• Murayama Akiyuki
• Toshiba Kk

Inventors

• Aikawa Hisanori
• Iwayama Masayoshi
• Murayama Akiyuki

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/23 Primary

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• H01L43/08

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic