Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method

Patent metadata

Field	Value
Publication number	US-9449825-B2
Application number	US-201313752420-A
Country	US
Kind code	B2
Filing date	Jan 29, 2013
Priority date	Feb 3, 2012
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A first flash heating is performed in which a lower flash lamp irradiates a back surface of a semiconductor wafer with flashes of light, so that heat conduction from the back surface to a surface of the semiconductor wafer raises the temperature of the surface from the room temperature to an intermediate temperature. Then, a second flash heating is performed in which an upper flash lamp irradiates the surface of the semiconductor wafer with flashes of light, to raise the temperature of the surface of the semiconductor wafer from the intermediate temperature to a target temperature. Since only the irradiation with flashes of light emitted from the lower flash lamp and the upper flash lamp is used to cause the semiconductor wafer having the room temperature to reach the target temperature, all heat treatments can be completed in an extremely short time of one second or less.

First claim

What is claimed is:

1. A heat treatment apparatus for heating a substrate having a pattern formed on a front surface thereof by irradiating said substrate with flashes of light, said heat treatment apparatus comprising:
a chamber configured to receive a substrate;
a support member configured to support a substrate within said chamber;
a first flash lamp configured to irradiate a back surface of a substrate supported on said support member with flashes of light, to thereby perform a supplementary heating on said substrate;
a second flash lamp configured to irradiate a front surface of said substrate having subjected to the supplementary heating with flashes of light, to thereby heat said front surface to a predetermined target temperature; and
a halogen lamp configured to, before said first flash lamp starts the supplementary heating, preheat said substrate by irradiating said back surface with light.

2. The heat treatment apparatus according to claim 1 , wherein a time period during which said first flash lamp emits flashes of light is equal to or shorter than one second but longer than a heat conduction time that is required for heat to be conducted from said back surface to said front surface.

3. The heat treatment apparatus according to claim 1 , wherein the rate of the temperature rise in said back surface, which is caused by the irradiation with flashes of light emitted from said first flash lamp, is 1000° C. per second or higher.

4. The heat treatment apparatus according to claim 1 , wherein a time interval from when said first flash lamp completes the supplementary heating to when said second flash lamp starts emitting flashes of light is longer than a heat conduction time that is required for heat to be conducted from said back surface to said front surface.

5. The heat treatment apparatus according to claim 1 , wherein after said first flash lamp completes the supplementary heating and then a temperature difference between said front surface and said back surface decreases to 10° C. or less, said second flash lamp starts emitting flashes of light.

6. The heat treatment apparatus according to claim 1 , wherein
said first flash lamp and said second flash lamp are rod-like lamps,
said first flash lamp and said second flash lamp are arranged perpendicularly to each other.

7. The heat treatment apparatus according to claim 1 , wherein
a light shielding member is provided around said support member, said light shielding member optically isolating said first flash lamp and said second flash lamp from each other.

8. The heat treatment apparatus according to claim 1 , wherein
said first flash lamp is arranged at a position closer to said support member than said halogen lamp is.

9. The heat treatment apparatus according to claim 1 , wherein
said support member includes a Bernoulli chuck made of quartz and configured to hold said substrate in a non-contact fashion due to the Bernoulli effect.

10. A heat treatment method for heating a substrate having a pattern formed on a front surface thereof by irradiating said substrate with flashes of light, said method comprising the steps of:
(a) irradiating a back surface of a substrate supported on a support member within a chamber with flashes of light, to thereby perform a supplementary heating on said substrate; and
(b) irradiating a front surface of said substrate having subjected to the supplementary heating with flashes of light, to thereby heat said front surface to a predetermined target temperature; and
(c) prior to said step (a), irradiating said back surface with light emitted from a halogen lamp, to thereby preheat said substrate.

11. The heat treatment method according to claim 10 , wherein
a time period during which the irradiation with flashes of light in said step (a) is performed is equal to or shorter than one second but longer than a heat conduction time that is required for heat to be conducted from said back surface to said front surface.

12. The heat treatment method according to claim 10 , wherein
the rate of the temperature rise in said back surface, which is caused by the irradiation with flashes of light in said step (a), is 1000° C. per second or higher.

13. The heat treatment method according to claim 10 , wherein
a time interval from when the supplementary heating in said step (a) is completed to when the irradiation with flashes of light in said step (b) is started is longer than a heat conduction time that is required for heat to be conducted from said back surface to said front surface.

14. The heat treatment method according to claim 10 , wherein
after the supplementary heating in said step (a) is completed and then a temperature difference between said front surface and said back surface decreases to 10° C. or less, the irradiation with flashes of light in said step (b) is started.

15. A heat treatment method for heating a substrate by irradiating said substrate with flashes of light, said method comprising the steps of:
(a) irradiating a back surface of a substrate supported on a support member within a chamber with flashes of light, to thereby heat said substrate from the back surface side thereof; and
(b) irradiating a front surface of said substrate supported on said support member with flashes of light, to thereby heat said substrate from the front surface side thereof,
wherein a time period during which the irradiation with flashes of light in said step (a) is performed and a time period during which the irradiation with flashes of light in said step (b) is performed at least partially overlap each other.

16. The heat treatment method according to claim 15 , wherein
a light emission output of flashes of light in said step (a) and a light emission output of flashes of light in said step (b) are different from each other.

17. The heat treatment method according to claim 15 , wherein
the beginning of the time period during which the irradiation with flashes of light in said step (a) is performed is different from the beginning of the time period during which the irradiation with flashes of light in said step (b) is performed.

18. The heat treatment method according to claim 15 , wherein
the end of the time period during which the irradiation with flashes of light in said step (a) is performed is different from the end of the time period during which the irradiation with flashes of light in said step (b) is performed.

19. The heat treatment method according to claim 18 , wherein
the end of the time period during which the irradiation with flashes of light in said step (a) is performed is earlier than the end of the time period during which the irradiation with flashes of light in said step (b) is performed, with the time interval between said ends being equal to or shorter than a heat conduction time that is required for heat to be conducted from said back surface to said front surface.

Assignees

• Dainippon Screen Mfg
• Screen Holdings Co Ltd

Inventors

• Yokouchi Kenichi

Classifications

• H10P72/78

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P34/00 Primary

  Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices · CPC title

• F27B5/14

  Arrangements of heating devices · CPC title

• F27B5/18

  Arrangement of controlling, monitoring, alarm or like devices · CPC title

• F27D5/0037

  Supports specially adapted for semi-conductors · CPC title