Photoresist pattern trimming methods
US-9209035-B2 · Dec 8, 2015 · US
US9448486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9448486-B2 |
| Application number | US-201414586945-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2014 |
| Priority date | Dec 30, 2013 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
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Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R 1 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl; R 2 is chosen from C 1 -C 15 alkylene; and R 3 is chosen from C 1 -C 3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
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What is claimed is: 1. A photoresist pattern trimming composition, comprising: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R 1 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl; R 2 is chosen from C 1 -C 15 alkylene; and R 3 is chosen from C 1 -C 3 fluoroalkyl; an aromatic a…
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