Well Modulation for Defect Inspection
US-2024079278-A1 · Mar 7, 2024 · US
Ion implantation methods
US9209028B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9209028-B2 |
| Application number | US-201314145674-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 31, 2013 |
| Priority date | Dec 31, 2012 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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Abstract
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Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming an ion implanted region in a semiconductor device, comprising: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composi…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P30/22Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9209028B2 cover?
- Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid l…
- Who is the assignee on this patent?
- Rohm & Haas Elect Mat
- What technology area does this patent fall under?
- Primary CPC classification H10P30/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).