Determining a state of a high aspect ratio hole using measurement results from an electrostatic measurement device

US9448253B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9448253-B2
Application numberUS-201514719193-A
CountryUS
Kind codeB2
Filing dateMay 21, 2015
Priority dateJun 12, 2014
Publication dateSep 20, 2016
Grant dateSep 20, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

First claim

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We claim: 1. A method for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, the method comprises: obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing, by a processor, the multiple measurement results to determine a state of the HAR hole based upon calculating a change of a potential offset over time. 2. The method according to claim 1 , wherein the measurement results are indicative of at least one of the potential offset between the probe tip and at least one portion of a wall of the HAR hole; and an electrostatic force applied on the probe tip. 3. The method according to claim 1 , wherein the probe tip is located at a microscopic scale distance from the HAR hole. 4. The method according to claim 1 , comprising illuminating multiple locations within the HAR hole with a beam of charged particles during the illumination period. 5. The method according to claim 1 , comprising determining whether at least a minimal desired amount of electrons exited the HAR hole during the illumination period; and determining to process the multiple measurement results to determine the state of the HAR hole if less than the minimal desired amount of electrons exited the HAR hole during the illumination period. 6. The method according to claim 1 , comprising attempting to generate an image of the bottom of the HAR hole from at least zero electrons that exited the HAR hole during the illumination period. 7. A non-transitory computer readable medium that stores instructions for: obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to a high aspect ratio (HAR) hole, wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; wherein the HAR hole has a nanometric scale width and is formed in a substrate; and processing the multiple measurement results to determine a state of the HAR hole based upon calculating a change of a potential offset over time. 8. The non-transitory computer readable medium according to claim 7 wherein the measurement results are indicative of at least one of the potential offset between the probe tip and at least one portion of a wall of the HAR hole; and an electrostatic force applied on the probe tip. 9. The non-transitory computer readable medium according to claim 7 that stores instructions for illuminating multiple locations within the HAR hole with a beam of charged particles during the illumination period. 10. The non-transitory computer readable medium according to claim 7 that stores instructions for locating the probe tip at a microscopic scale distance from the HAR hole. 11. The non-transitory computer readable medium according to claim 7 that stores instructions for determining whether at least a minimal desired amount of electrons exited the HAR hole during the illumination period; and determining to process the multiple measurement results to determine the state of the HAR hole if less than the minimal desired amount of electrons exited the HAR hole during the illumination period. 12. The non-transitory computer readable medium according to claim 7 that stores instructions for attempting to generate an image of the bottom of the HAR hole from at least zero electrons that exited the HAR hole during the illumination period. 13. A system for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, the system comprises: an interface that is arranged to obtain, during an illumination period, multiple measurement results obtained by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and a processor that is arranged to process the multiple measurement results to determine a state of the HAR hole based upon calculating a change of a potential offset over time. 14. The system according to claim 13 , further comprising the electrostatic measurement device and wherein the measurement results are indicative of at least one of the potential offset between the probe tip and at least one portion of a wall of the HAR hole; and an electrostatic force applied on the probe tip. 15. The system according to claim 13 , comprising a charge particle device that is arranged to illuminate multiple locations within the HAR hole with a beam of charged particles during the illumination period. 16. The system according to claim 13 , wherein the processor is configured to determine whether at least a minimal desired amount of electrons exited the HAR hole during the illumination period; and determine to process the multiple measurement results to determine the state of the HAR hole if less than the minimal desired amount of electrons exited the HAR hole during the illumination period. 17. The system according to claim 13 , wherein the processor is configured to attempt to generate an image of the bottom of the HAR hole from at least zero electrons that exited the HAR hole during the illumination period.

Assignees

Inventors

Classifications

  • with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

  • Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope · CPC title

  • Depth profile · CPC title

  • G01Q60/30Primary

    Scanning potential microscopy · CPC title

  • Bottom of trenches or holes · CPC title

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What does patent US9448253B2 cover?
A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the …
Who is the assignee on this patent?
Applied Materials Israel Ltd, Applied Materials Israel Ltd
What technology area does this patent fall under?
Primary CPC classification G01Q60/30. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).