Nanolayer deposition process

Patent metadata

Field	Value
Publication number	US-9447496-B2
Application number	US-201213480912-A
Country	US
Kind code	B2
Filing date	May 25, 2012
Priority date	Feb 4, 2003
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

First claim

What is claimed is:

1. A deposition method to deposit a conformal film on a non-planar surface having at least one sidewall and a planar surface of a substrate, the conformal film comprised of a plurality of layers, the deposition method comprising:
depositing a first layer having at least one sidewall and a planar surface that is one to two nanometers thick over the non-planar surface of the substrate along the at least one sidewall and the planar surface of the substrate from a first plurality of precursors on the substrate, the deposition being not self-limiting;
first plasma treating and modifying the first layer along the at least one sidewall and the planar surface of the first layer using a second plurality of precursors to incorporate a material into the first layer;
depositing a second layer having at least one sidewall and a planar surface that is one to two nanometers thick from a third plurality of precursors;
second plasma treating and modifying the second layer along the sidewall and the planar surface of the second layer using a fourth plurality of precursors to incorporate a material into the second layer; and
repeating depositing the first layer, first plasma treating, depositing the second layer, and second plasma treating one to nine times to form the conformal film,
wherein the conformal film conforms to the non-planar surface, and
wherein the first plurality of precursors has a different composition than the third plurality of precursors such that the conformal film comprises a multi-layer film or a nanolaminate film.

2. The method of claim 1 , wherein at least one of first plasma treating and second plasma treating comprises applying thermal energy.

3. The method of claim 1 , wherein at least one of first plasma treating and second plasma treating comprises applying a bias voltage.

4. The method of claim 1 , wherein at least one of first plasma treating and second plasma treating comprises doping.

5. The method of claim 4 , wherein doping comprises carbon-doping.

6. The method of claim 5 , wherein the first layer comprises SiO 2 .

7. The method of claim 4 , wherein doping comprises fluorine-doping.

8. The method of claim 7 , wherein the first layer comprises SiO 2 .

9. The method of claim 4 , wherein doping comprises copper-doping.

10. The method of claim 9 , wherein the first layer comprises aluminum.

11. The method of claim 1 , wherein at least one of first plasma treating and second plasma treating comprises film oxidation.

12. The method of claim 11 , wherein depositing the first layer comprises depositing a nitride layer.

13. The method of claim 11 , wherein at least one of first plasma treating and second plasma treating comprises applying a plasma oxygen.

14. The method of claim 11 , wherein at least one of first plasma treating and second plasma treating comprises forming an oxygen-rich oxynitride film.

15. The method of claim 1 , wherein at least one of first plasma treating and second plasma treating comprises film nitridation.

16. The method of claim 15 , wherein depositing the first layer further comprises depositing an oxide layer.

17. The method of claim 15 , wherein at least one of first plasma treating and second plasma treating comprises applying a plasma nitrogen.

18. The method of claim 15 , wherein at least one of first plasma treating and second plasma treating comprises forming a nitrogen-rich oxynitride film.

19. The method of claim 15 , wherein at least one of first plasma treating and second plasma treating comprises applying a NH 3 flow.

20. The method of claim 1 , wherein plasma treating comprises ion implantation.

21. The method of claim 1 , wherein first plasma treating is the same as second plasma treating.

Assignees

• Nguyen Tue
• Nguyen Tai Dung
• Asm Int Nv

Inventors

• Nguyen Tue
• Nguyen Tai Dung

Classifications

• C23C16/45525 Primary

  Atomic layer deposition [ALD] · CPC title

• C23C16/56

  After-treatment · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title