Magnesium alloy for room temperature and manufacturing method thereof
US-9085815-B2 · Jul 21, 2015 · US
US9447482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9447482-B2 |
| Application number | US-201214117574-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 18, 2012 |
| Priority date | May 20, 2011 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
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The present invention relates to a magnesium-based alloy, and to a method for producing same. The method comprises the steps of: melting a magnesium alloy into a liquid state; adding a silicon compound to said molten magnesium alloy; exhausting the silicon compound through a full reaction between said molten magnesium alloy and said added silicon compound such that the silicon compound does not substantially remain in the magnesium alloy; and exhausting the silicon produced as a result of said exhaustion in the precious step such that the silicon may not substantially remain in said magnesium alloy.
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The invention claimed is: 1. A method for producing a magnesium-based alloy, the method comprising: melting a magnesium or magnesium alloy into a liquid phase; adding a silicon compound to the molten magnesium or magnesium alloy; evenly spreading the added silicon compound on the molten magnesium or magnesium alloy such that the added silicon compound is not mixed into the molten magnesium or magnesium alloy; exhausting at least some of the silicon compound in the molten magnesium or magnesium alloy through a full reaction between the molten magnesium or magnesium alloy and the added silicon compound such that the silicon compound does not substantially remain in the magnesium alloy; and reacting at least some of the silicon produced as a result of the exhausting in the molten magnesium or magnesium alloy. 2. A method for producing a magnesium-based alloy, the method comprising: melting a magnesium or magnesium alloy into a liquid phase; adding a silicon compound to the molten magnesium or magnesium alloy; evenly spreading the added silicon compound on the molten magnesium or magnesium alloy such that the added silicon compound is not mixed into the molten magnesium or magnesium alloy; exhausting the silicon compound through a full reaction between the molten magnesium alloy and the added silicon compound such that the silicon compound does not substantially remain in the magnesium alloy; and reacting the silicon produced as a result of the exhausting such that the silicon compound does not substantially remain in the magnesium alloy. 3. The method of claim 2 , wherein oxygen elements in the silicon compound are removed in the form of oxygen gas or in the form of dross through a combination of magnesium elements in the molten magnesium or magnesium alloy and/or magnesium alloy elements. 4. The method of claim 2 , wherein the reaction between the molten magnesium or magnesium alloy and the added silicon compound is promoted by agitating the molten magnesium or magnesium alloy. 5. The method of claim 2 , wherein the silicon produced as a result of the exhausting does not substantially remain by forming a compound with at least one of magnesium in the magnesium alloy and other alloy elements. 6. The method of claim 2 , wherein the silicon compound is in a powder phase to promote a reaction between the silicon compound with the magnesium or magnesium alloy. 7. The method of claim 2 , wherein the silicon compound is added to the molten magnesium or magnesium alloy in an amount enough to fully react with the molten magnesium or magnesium alloy to be completely exhausted such that the silicon compound does not substantially remain in the magnesium alloy. 8. The method of claim 4 , wherein the agitating is performed by electromagnetically agitating the molten magnesium or magnesium alloy. 9. The method of claim 4 , wherein the agitating is performed by mechanically agitating the molten magnesium or magnesium alloy. 10. The method of claim 4 , wherein the agitating is performed in a state in which a surface of the molten magnesium or magnesium alloy is exposed in the air. 11. The method of claim 5 , wherein the produced compound is Mg 2 Si. 12. The method of claim 6 , wherein the silicon compound has a grain size in a range of 0.1 to 200 μm. 13. The method of claim 7 , wherein the silicon compound is added in an amount of 0.001 wt % to 30 wt %. 14. A method for producing a magnesium-based alloy, the method comprising: melting a magnesium or magnesium alloy into a liquid phase; adding a silicon compound to the molten magnesium or magnesium alloy; evenly spreading the added silicon compound on the molten magnesium or magnesium alloy such that the added silicon compound is not mixed into the molten magnesium or magnesium alloy; removing oxygen elements from the silicon compound through a reduction reaction between the molten magnesium or magnesium alloy and the added silicon compound; and making the silicon produced as a result of the reduction reaction into a compound in the molten magnesium or magnesium alloy. 15. The method of claim 14 , wherein the oxygen elements are removed in the form of oxygen gas or in the form of dross through a combination of magnesium elements in the molten magnesium or magnesium alloy and/or magnesium alloy elements. 16. The method of claim 14 , wherein the silicon produced as a result of the reduction reaction does not substantially remain by forming a compound with at least one of magnesium in the magnesium alloy and other alloy elements. 17. The method of claim 14 , wherein the silicon compound is in a powder phase to promote a reaction between the silicon compound with the magnesium or magnesium alloy. 18. The method of claim 14 , wherein the silicon compound is added to the molten magnesium or magnesium alloy in an amount enough to fully react with the molten magnesium or magnesium alloy to be completely exhausted such that the silicon compound does not substantially remain in the magnesium alloy. 19. The method of claim 16 , wherein the compound of the silicon produced as a result of the reduction reaction and the magnesium or magnesium alloy is Mg 2 Si. 20. The method of claim 17 , wherein the silicon compound has a grain size in a range of 0.1 to 200 μm. 21. The method of claim 18 , wherein the silicon compound is added in an amount of 0.001 wt % to 30 wt %.
Alloys based on magnesium · CPC title
Obtaining magnesium · CPC title
Casting aluminium or magnesium {(no material; see B22D21/007)} · CPC title
with refining or fluxing agents; Use of materials therefor, {e.g. slagging or scorifying agents}(C22B9/18 takes precedence){(C22B9/006 takes precedence)} · CPC title
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