Back grinding apparatus and wear amount measuring method using the same
US-2024424637-A1 · Dec 26, 2024 · US
US9446493B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9446493-B2 |
| Application number | US-201615014548-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 3, 2016 |
| Priority date | Aug 24, 2012 |
| Publication date | Sep 20, 2016 |
| Grant date | Sep 20, 2016 |
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Kits for polishing sapphire surfaces are disclosed. The kits have compositions including colloidal silica and the colloidal silica has a broad particle size distribution. The kits also include a polishing pad. The polishing pad may include polyurethane impregnated with polyester and it may have a compressibility of about 1% to about 40% and a Shore D hardness of about 50 to about 60.
Opening claim text (preview).
The invention claimed is: 1. A kit for polishing a sapphire surface, the kit comprising: (a) a polishing composition comprising colloidal silica having a particle size distribution of about 5 nm to about 120 nm, wherein the ratio of the standard deviation of the particle size of the colloidal silica (σ), to the mean particle size of the colloidal silica (r), is at least about 0.3; and (b) a polishing pad comprising polyurethane impregnated with polyester, having a compressibility about 1% to about 40% and a Shore D hardness of about 50 to about 60. 2. The kit of claim 1 , wherein the colloidal silica comprises about 1 wt % to about 50 wt % of the polishing composition. 3. The kit of claim 1 , wherein the ratio σ/r is from about 0.3 to about 0.9. 4. The kit of claim 1 , wherein the colloidal silica composition has a mean particle size of about 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 41 nm, 42 nm, 43 nm, 44 nm, 45 nm, 46 nm, 47 nm, 48 nm, 49 nm, or 50 nm and each size is 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, 6.5%, 7.0%, 7.5%, 8.0%, 8.5%, 9.0%, 9.5%, 10.0%, 10.5%, 11.0%, 11.5%, 12.0%, 12.5%, 13.0%, 13.5%, 14.0%, 14.5%, 15.0%, 15.5%, 16.0%, 16.5%, 17.0%, 17.5%, 18.0%, 18.5%, 19.0%, 19.5%, 20.0%, 20.5%, 21.0%, 21.5%, 22.0%, 22.5%, 23.0%, 23.5%, 24.0%, 24.5%, or 25.0% of the total mass of the colloidal silica particles used in the polishing composition. 5. The kit of claim 1 , wherein the colloidal silica has a mean particle size of about 5 nm to about 50 nm. 6. The kit of claim 1 , wherein the polishing composition further comprises an additional component selected from the group consisting of an alkaline substance, inorganic polishing particles, a water-soluble alcohol, a chelating agent and a buffering agent. 7. The kit of claim 1 , wherein a pH of the polishing composition is about 6 to about 10.5. 8. The kit of claim 1 , wherein the colloidal silica is prepared by a process comprising: (a) feeding a first component including preformed silica sol particles of predetermined minimum particle size to at least one agitated, heated reactor; (b) adding a second component including silicic acid to said reactor, wherein the second component is fed to the reactor at a rate that is less than a new silica particle nucleation rate; (c) adding a third component including an alkaline agent to the reactor; and (d) wherein the minimum particle size of the resulting colloidal silica is controlled by the particle size of the first component, and wherein the particle size distribution is dependent on the ratio of the feed rate of the first component to the reactor to the feed rate of the second component to the reactor.
for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title
characterised by the composition of the lapping agent · CPC title
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Aqueous dispersions (C09G1/02 takes precedence) · CPC title
characterised by the composition or properties of the pad materials · CPC title
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