Kit for polishing sapphire surfaces

US9446493B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9446493-B2
Application numberUS-201615014548-A
CountryUS
Kind codeB2
Filing dateFeb 3, 2016
Priority dateAug 24, 2012
Publication dateSep 20, 2016
Grant dateSep 20, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Kits for polishing sapphire surfaces are disclosed. The kits have compositions including colloidal silica and the colloidal silica has a broad particle size distribution. The kits also include a polishing pad. The polishing pad may include polyurethane impregnated with polyester and it may have a compressibility of about 1% to about 40% and a Shore D hardness of about 50 to about 60.

First claim

Opening claim text (preview).

The invention claimed is: 1. A kit for polishing a sapphire surface, the kit comprising: (a) a polishing composition comprising colloidal silica having a particle size distribution of about 5 nm to about 120 nm, wherein the ratio of the standard deviation of the particle size of the colloidal silica (σ), to the mean particle size of the colloidal silica (r), is at least about 0.3; and (b) a polishing pad comprising polyurethane impregnated with polyester, having a compressibility about 1% to about 40% and a Shore D hardness of about 50 to about 60. 2. The kit of claim 1 , wherein the colloidal silica comprises about 1 wt % to about 50 wt % of the polishing composition. 3. The kit of claim 1 , wherein the ratio σ/r is from about 0.3 to about 0.9. 4. The kit of claim 1 , wherein the colloidal silica composition has a mean particle size of about 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 41 nm, 42 nm, 43 nm, 44 nm, 45 nm, 46 nm, 47 nm, 48 nm, 49 nm, or 50 nm and each size is 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, 6.0%, 6.5%, 7.0%, 7.5%, 8.0%, 8.5%, 9.0%, 9.5%, 10.0%, 10.5%, 11.0%, 11.5%, 12.0%, 12.5%, 13.0%, 13.5%, 14.0%, 14.5%, 15.0%, 15.5%, 16.0%, 16.5%, 17.0%, 17.5%, 18.0%, 18.5%, 19.0%, 19.5%, 20.0%, 20.5%, 21.0%, 21.5%, 22.0%, 22.5%, 23.0%, 23.5%, 24.0%, 24.5%, or 25.0% of the total mass of the colloidal silica particles used in the polishing composition. 5. The kit of claim 1 , wherein the colloidal silica has a mean particle size of about 5 nm to about 50 nm. 6. The kit of claim 1 , wherein the polishing composition further comprises an additional component selected from the group consisting of an alkaline substance, inorganic polishing particles, a water-soluble alcohol, a chelating agent and a buffering agent. 7. The kit of claim 1 , wherein a pH of the polishing composition is about 6 to about 10.5. 8. The kit of claim 1 , wherein the colloidal silica is prepared by a process comprising: (a) feeding a first component including preformed silica sol particles of predetermined minimum particle size to at least one agitated, heated reactor; (b) adding a second component including silicic acid to said reactor, wherein the second component is fed to the reactor at a rate that is less than a new silica particle nucleation rate; (c) adding a third component including an alkaline agent to the reactor; and (d) wherein the minimum particle size of the resulting colloidal silica is controlled by the particle size of the first component, and wherein the particle size distribution is dependent on the ratio of the feed rate of the first component to the reactor to the feed rate of the second component to the reactor.

Assignees

Inventors

Classifications

  • B24B7/228Primary

    for grinding thin, brittle parts, e.g. semiconductors, wafers (grinding edges of thin, brittle parts B24B9/065) · CPC title

  • B24B37/044Primary

    characterised by the composition of the lapping agent · CPC title

  • containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

  • Aqueous dispersions (C09G1/02 takes precedence) · CPC title

  • characterised by the composition or properties of the pad materials · CPC title

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Frequently asked questions

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What does patent US9446493B2 cover?
Kits for polishing sapphire surfaces are disclosed. The kits have compositions including colloidal silica and the colloidal silica has a broad particle size distribution. The kits also include a polishing pad. The polishing pad may include polyurethane impregnated with polyester and it may have a compressibility of about 1% to about 40% and a Shore D hardness of about 50 to about 60.
Who is the assignee on this patent?
Ecolab Usa Inc
What technology area does this patent fall under?
Primary CPC classification B24B7/228. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Sep 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).