Thin-layer encapsulation for an optoelectronic component, method for the production thereof, and optoelectronic component

Patent metadata

Field	Value
Publication number	US-9444062-B2
Application number	US-201013260560-A
Country	US
Kind code	B2
Filing date	Mar 22, 2010
Priority date	Mar 24, 2009
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A thin-layer encapsulation ( 1 ) for an optoelectronic component. The thin-layer encapsulation ( 1 ) comprises a sequence of layers ( 2 ) that comprises the following layers: a first ALD layer ( 3 ) deposited by means of atomic layer deposition, and a second ALD layer ( 4 ) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.

First claim

The invention claimed is:

1. An optoelectronic component, which is an organic light emitting diode, comprising:
a substrate,
an active, radiation-generating zone, which is applied on the substrate, and
a thin-film encapsulation which is arranged directly on the active zone comprising a layer sequence, which comprises the following layers:
a first ALD layer deposited by atomic layer deposition, the first ALD layer consisting of lanthanum oxide; and
a second ALD layer deposited by atomic layer deposition, the second ALD layer consisting of titanium oxide, the first ALD-layer and the second ALD-layer are in direct contact with each other and repeated multiply in an alternating manner,
wherein:
an outside surface of the layer sequence is formed by the second ALD layer consisting of titanium oxide, said outside surface being freely accessible, and
the thin-film encapsulation is fitted above the active zone in such a way that the radiation generated in the active zone passes through the thin-film encapsulation.

2. The optoelectronic component according to claim 1 , wherein the layer sequence of the thin-film encapsulation comprises at least one further layer which is deposited by a plasma-assisted process, or by thermal evaporation.

3. The optoelectronic component according to claim 2 , wherein the further layer comprises at least one of the following materials: silicon nitride, silicon oxide, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, aluminum oxide and mixtures and alloys thereof.

4. The optoelectronic component according to claim 1 , wherein the ALD layers has a thickness of between one atomic layer and 10 nm, inclusive of the limits.

5. The optoelectronic component according to claim 1 , wherein the substrate is embodied in a flexible fashion.

6. A method for producing an optoelectronic component, which is an organic light emitting diode, comprising:
providing a substrate,
depositing an active, radiation-generating zone on the substrate,
depositing a thin-film encapsulation directly on the active zone by depositing a first ALD layer by atomic layer deposition on the active, radiation-generating, the first ALD layer consisting of lanthanum oxide; and
depositing a second ALD layer by atomic layer deposition on the first ALD layer, the second ALD layer consisting of titanium oxide,
wherein:
the first ALD-layer and the second ALD-layer are in direct contact with each other and repeated multiply in an alternating manner, and
an outside surface of the thin-film encapsulation is formed by the second ALD-layer consisting of titanium oxide, said outside surface being freely accessible.

7. An optoelectronic component, which is an organic light emitting diode, comprising:
a substrate,
an active, radiation-generating zone, which is applied on the substrate, and
a thin-film encapsulation, which comprises a layer sequence as follows:
a first ALD layer deposited by atomic layer deposition, said first ALD layer consisting of titanium oxide;
a second ALD layer deposited by atomic layer deposition, said second ALD layer consisting of aluminum oxide; and
a further layer, which was deposited by a plasma-assisted process or by thermal evaporation, said further layer comprising silicon nitride, wherein the first and the second ALD layers are in direct contact with each other and repeated alternatingly, terminating at the first ALD layer consisting of titanium oxide such that an outside surface of the thin-film encapsulation is formed by the ALD-layer consisting of titanium oxide, said outside surface being freely accessible, and
the layers of the layer sequence are stacked above each other in a stacking direction.

8. The optoelectronic component according to claim 2 , wherein the further layer comprises silicon nitride or consists of silicon nitride.

9. The optoelectronic component according to claim 2 , wherein the further layer has a thickness between 1 nm and 5 μm, inclusive of the limits.

10. The optoelectronic component according to claim 2 , wherein the further layer has a thickness between 1 nm and 400 nm, inclusive of the limits.

11. The optoelectronic component according to claim 2 wherein the plasma-assisted process is sputtering or PECVD.

Assignees

• Becker Dirk
• Dobbertin Thomas
• Lang Erwin
• Reusch Thilo
• Osram Oled Gmbh

Inventors

• Becker Dirk
• Dobbertin Thomas
• Lang Erwin
• Reusch Thilo

Classifications

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K30/15

  Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 (photo-electrochemical devices comprising a liquid electrolyte or a solid electrolyte H01G9/20) · CPC title

• H10K50/8445 Primary

  multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title

• H01L51/448 Primary

  Electricity · mapped topic