Thin film transistor

Patent metadata

Field	Value
Publication number	US-9443986-B2
Application number	US-201414195863-A
Country	US
Kind code	B2
Filing date	Mar 4, 2014
Priority date	Sep 9, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of In x Ga y Zn z O w , in which x, y and z satisfy the following formulas 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.

First claim

What is claimed is:

1. A thin film transistor, comprising:
an oxide semiconductor layer comprising indium gallium zinc oxide represented by a general formula of In x Ga Y Zn z O w , wherein x, y, z and w respectively represent atomic ratios of indium, gallium, zinc and oxygen, and x, y and z satisfy the requirements of the following formulae: 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2;
a gate electrode disposed beneath the oxide semiconductor layer;
a gate insulating layer positioned between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode disposed on the gate insulating layer and positioned at different sides of the oxide semiconductor layer, wherein each of the source electrode and the drain electrode extends from a surface of the gate insulating layer to a surface of the oxide semiconductor layer.

2. The thin film transistor according to claim 1 , wherein x and z satisfy the following formula: 0.9≦(x/z)≦1.1.

3. The thin film transistor according to claim 1 , wherein y and w satisfy the following formula: 0.375≦(y/w)≦0.5.

4. The thin film transistor according to claim 1 , wherein when (x+y+z) is defined as 1, x satisfies the following formula: 0.25≦x≦0.3.

5. The thin film transistor according to claim 1 , wherein when (x+y+z) is defined as 1, y satisfies the following formula: 0.42≦y≦0.5.

6. The thin film transistor according to claim 1 , wherein when (x+y+z) is defined as 1, z satisfies the following formula: 0.25≦z≦0.3.

7. The thin film transistor according to claim 1 , wherein when (x+y+z+w) is defined as 1, x satisfies the following formula: 0.125≦x≦0.134.

8. The thin film transistor according to claim 1 , wherein when (x+y+z+w) is defined as 1, y satisfies the following formula: 0.2≦y≦0.25.

9. The thin film transistor according to claim 1 , wherein when (x+y+z+w) is defined as 1, z satisfies the following formula: 0.125≦z≦0.134.

10. The thin film transistor according to claim 1 , wherein when (x+y+z+w) is defined as 1, w satisfies the following formula: 0.5≦w≦0.54.

11. An oxide semiconductor material comprises indium gallium zinc oxide represented by a general formula of In x Ga y Zn x O w , wherein x, y, z and w respectively represent atomic ratios of indium, gallium, zinc and oxygen, and, x, y and z satisfy the requirements of the following formulae:
0.25≦ x /( x+y+z )≦0.3;

0.42≦ y /( x+y+z )≦0.5; and

0.25≦ z /( x+y+z )≦0.3.

12. A thin film transistor, comprising:
a substrate;
an oxide semiconductor layer disposed on the substrate, and comprising indium gallium zinc oxide represented by a general formula of In x Ga y Zn z O w , wherein x, y, z and w respectively represent atomic ratios of indium, gallium, zinc and oxygen, and x, y and z satisfy the requirements of the following formulae: 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2;
a gate electrode disposed above the oxide semiconductor layer;
a gate insulating layer positioned between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode disposed on the oxide semiconductor layer and positioned at different sides of the gate electrode.

13. A thin film transistor, comprising:
a substrate;
an oxide semiconductor layer disposed on the substrate, and comprising indium gallium zinc oxide represented by a general formula of In x Ga y Zn z O w , wherein x, y, z and w respectively represent atomic ratios of indium, gallium, zinc and oxygen, and x, y and z satisfy the requirements of the following formulae: 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2;
a gate electrode disposed above the oxide semiconductor layer;
a gate insulating layer positioned between the gate electrode and the oxide semiconductor layer; and
a source electrode and a drain electrode disposed on the substrate and positioned at different sides of the gate electrode, wherein each of the source electrode and the drain electrode has an end interposed between the oxide semiconductor layer and the substrate.

Assignees

• E Ink Holdings Inc

Inventors

• Wang Chih-Hsuan
• Yeh Chia-Chun
• Shinn Ted-Hong

Classifications

• H10D62/875

  being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H01L29/26

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic