Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing

US9443765B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9443765-B2
Application numberUS-201514590910-A
CountryUS
Kind codeB2
Filing dateJan 6, 2015
Priority dateJan 29, 2014
Publication dateSep 13, 2016
Grant dateSep 13, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape from the thin water soluble dry film. The thin water soluble dry film is patterned with a laser scribing process, exposing regions of the semiconductor wafer between the ICs. The method involves etching the semiconductor wafer through gaps in the patterned thin water soluble dry film, and removing the thin water soluble dry film.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits (ICs), the method comprising: applying a compound film over a surface of the semiconductor wafer, wherein the compound film comprises a thin dry film and adhesive tape adhered to the thin dry film, and wherein the compound film is a unified film of the thin dry film and the adhesive tape prior to applying the compound film over the surface of the semiconductor wafer; removing the adhesive tape from the thin dry film; patterning the thin dry film with a laser scribing process, exposing regions of the semiconductor wafer between the ICs; and etching the semiconductor wafer through gaps in the patterned thin water soluble dry film. 2. The method of claim 1 , wherein applying the compound film to the surface of the semiconductor wafer comprises: stretching the compound film; and attaching the compound film to the surface of the semiconductor wafer. 3. The method of claim 1 , further comprising: forming an underfill layer over the semiconductor wafer that partially covers bumps or pads disposed over the semiconductor wafer; wherein applying the compound film to the surface of the semiconductor wafer comprises covering the bumps or pads with the compound film. 4. The method of claim 1 , further comprising adhering the adhesive tape to the thin dry film, forming the compound film. 5. The method of claim 4 , wherein: adhering the adhesive tape to the thin dry film comprises adhering a release layer of the adhesive tape to a first side of the thin dry film; applying the compound film comprises attaching a second side of the thin dry film to the surface of the semiconductor wafer; and removing the adhesive tape comprises releasing the release layer. 6. The method of claim 5 , wherein releasing the release layer comprises irradiating the adhesive tape with UV radiation. 7. The method of claim 5 , wherein releasing the release layer comprises heating the adhesive tape. 8. A method of dicing a substrate comprising a plurality of integrated circuits (ICs), the method comprising: adhering an adhesive tape to a thin dry film; subsequent to adhering the adhesive tape to the thin dry film, stretching the thin dry film adhered to the adhesive tape; subsequent to stretching the thin dry film adhered to the adhesive tape, attaching the stretched thin dry film adhered to the adhesive tape to the substrate; releasing the adhesive tape from the thin dry film; patterning the thin dry film to form a trench exposing regions of the substrate between the ICs; and etching the substrate to advance the trench through the substrate. 9. The method of claim 8 , further comprising: forming an underfill layer over the substrate that partially covers bumps or pads disposed over the substrate; wherein attaching the stretched thin dry film adhered to the adhesive tape to the substrate comprises covering the bumps or pads with the thin dry film. 10. The method of claim 8 , wherein the thin dry film has a thickness in a range of 5 to 15 μm. 11. The method of claim 8 , wherein: adhering the adhesive tape to the thin dry film comprises adhering a release layer of the adhesive tape to a first side of the thin dry film; attaching the stretched thin dry film adhered to the adhesive tape to the substrate comprises attaching a second side of the thin dry film to the substrate; and removing the adhesive tape comprises releasing the release layer. 12. The method of claim 11 , wherein releasing the release layer comprises irradiating the adhesive tape with UV radiation. 13. The method of claim 11 , wherein releasing the release layer comprises heating the adhesive tape. 14. The method of claim 8 , wherein the thin dry film comprises a thin water soluble dry film. 15. A method of dicing a substrate comprising a plurality of integrated circuits (ICs), the method comprising: adhering an adhesive tape to a thin dry film; subsequent to adhering the adhesive tape to the thin dry film, stretching the thin dry film adhered to the adhesive tape; subsequent to stretching the thin dry film adhered to the adhesive tape, attaching the stretched thin dry film adhered to the adhesive tape to the substrate; and patterning, with a laser scribe process, the thin dry film to form a trench exposing regions of the substrate between the ICs. 16. The method of claim 15 , further comprising: forming an underfill layer over the substrate that partially covers bumps or pads disposed over the substrate; attaching the stretched thin dry film adhered to the adhesive tape to the substrate comprises covering the bumps or pads with the thin dry film. 17. The method of claim 15 , wherein: adhering the adhesive tape to the thin dry film comprises adhering a release layer of the adhesive tape to a first side of the thin dry film; applying the compound film comprises attaching a second side of the thin dry film to the substrate; and removing the adhesive tape comprises releasing the release layer. 18. The method of claim 17 , wherein releasing the release layer comprises irradiating the adhesive tape with UV radiation. 19. The method of claim 17 , wherein releasing the release layer comprises heating the adhesive tape. 20. The method of claim 15 , further comprising releasing the adhesive tape from the thin dry film prior to patterning the thin dry film with the laser scribe process.

Assignees

Inventors

Classifications

  • on active surfaces of flip-chip devices, e.g. underfills · CPC title

  • Apparatus for manufacturing die-attach connectors · CPC title

  • of die-attach connectors · CPC title

  • in solid form, e.g. by using a powder or by laminating a foil · CPC title

  • using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates · CPC title

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What does patent US9443765B2 cover?
Methods and systems for dicing a semiconductor wafer including a plurality of integrated circuits (ICs) are described. In one embodiment, a method involves adhering an adhesive tape to a thin water soluble dry film. The method involves applying the thin water soluble dry film adhered to the adhesive tape over a surface of the semiconductor wafer. The method involves removing the adhesive tape f…
Who is the assignee on this patent?
Lei Wei-Sheng, Papanu James S, Kumar Prabhat, and 3 more
What technology area does this patent fall under?
Primary CPC classification H10P72/0468. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).