Semi-polar III-nitride films and materials and method for making the same

Patent metadata

Field	Value
Publication number	US-9443727-B2
Application number	US-201414459120-A
Country	US
Kind code	B2
Filing date	Aug 13, 2014
Priority date	Apr 22, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

First claim

What is claimed is:

1. A method of producing a terminal semi-polar group III-nitride layer on a dissimilar substrate with nanometer scale control of semi-polar AlGaN and GaN growth rates, the method comprising:
a) Selecting a suitable substrate from the group consisting of sapphire, silicon carbide, magnesium aluminate spinel, lithium aluminate, silicon, silica glass, gallium nitride, aluminum nitride, or alloys thereof;
b) Growing an aluminum nitride nucleation layer on the substrate at any temperature ranging from 400 to 1300 degrees Celsius, and any thickness from 0.1 nm to 1000 μm;
c) Growing a stepped aluminum gallium nitride layer, wherein the stepped aluminum gallium nitride layer consists of six steps of Al x Ga 1-x N compositions including Al 1.00 Ga 0.00 N, Al 0.80 Ga 0.20 N, Al 0.60 Ga 0.40 N, Al 0.40 Ga 0.60 N, Al 0.20 Ga 0.80 N, and Al 0.00 Ga 1.00 N;
d) Growing of a periodic epi-structure consisting of alternating layers of group III-nitrides of dissimilar compositions at alternating precursor flows and alternating temperatures; and
e) Growing the terminal semi-polar group III-nitride layer upon the underlying nanometer scale III-nitride stepped layers and/or periodic structures.

2. The method of claim 1 wherein the semi-polar group III-nitride is oriented about a plane selected from group of orientations consisting of {10.1}, {10.2}, {10.3}, {20.1}, {30.1}, and {11.2} planes or their mixture.

3. The method of claim 1 wherein the substrate is {10.0} m-plane sapphire treated at any temperature ranging from 400 to 1300 degrees Celsius.

4. The method of claim 3 wherein the aluminum nitride nucleation layer is formed by reacting the substrate surface with ammonia for no less than 10 min relieving strain relating to lattice mismatch and thermal expansion mismatch.

5. The method of claim 1 wherein the semi-polar group III nitride layer is grown utilizing metalorganic chemical vapor deposition, hydride vapor phase epitaxy, or molecular beam epitaxy or their interplay.

6. The method of claim 1 wherein the distinct compositions of AlGaN are each them grown at distinctly different temperature and distinctly different ammonia flow.

7. The method of claim 1 wherein the periodic epi-structure consists of alternating layers of AlGaN and GaN deposited at corresponding periodic ammonia flow and corresponding periodic variations of temperature.

8. The method of claim 7 wherein the periodic epi-structure consists of between two to two hundred pair of alternating layers of AlGaN and GaN deposited at between two and two hundred corresponding periodic variations of ammonia flow and between two and two hundred corresponding periodic variations of temperature.

9. The method of claim 1 wherein c) precedes d), so that the periodic epi-structure is grown on a stepped aluminum gallium nitride layer under periodic variation of ammonia flow and periodic variation of growth temperature.

10. The method of claim 1 wherein d) precedes c), so that the stepped aluminum gallium nitride layer is grown upon a periodic epi-structure at gradual variation of ammonia flow and gradual variation of temperature.

11. The method of claim 1 wherein the terminal semi-polar group III-nitride layer consists of GaN deposited at any temperature ranging from 700 to 1100 degrees Celsius.

12. The method of claim 1 wherein the terminal semi-polar group III-nitride layer contains dopants selected from the group consisting of silicon, magnesium, zinc, iron, oxygen, or carbon or their mixture.

13. An aluminum gallium nitride template grown upon a sapphire substrate via the method of claim 1 at reduced growth rate, yielding further reduction in surface roughness.

14. The method of claim 1 , wherein the terminal semi-polar group III-nitride layer is grown at any temperature ranging from 700 to 1100 degrees Celsius.

15. A method of producing a terminal semi-polar group III-nitride layer on a dissimilar substrate with nanometer scale control of semi-polar AlGaN and GaN growth rates, the method comprising:
a) Selecting a suitable substrate from the group consisting of sapphire, silicon carbide, magnesium aluminate spinel, lithium aluminate, silicon, silica glass, gallium nitride, aluminum nitride, or alloys thereof;
b) Growing an aluminum nitride nucleation layer on the substrate at any temperature ranging from 400 to 1300 degrees Celsius, and any thickness from 0.1 nm to 1000 μm;
c) Growing a graded aluminum gallium nitride layer that involves a transition from an initial group III-nitride composition to a terminal group III-nitride composition over a total thickness ranging from approximately 5 nm to approximately 10 μm, wherein the transition is executed continuously, varying the composition as a function of growth time with no distinct layer structure;
d) Growing of a periodic epi-structure consisting of alternating layers of group III-nitrides of dissimilar compositions at alternating precursor flows and alternating temperatures;
e) Growing the terminal semi-polar group III-nitride layer upon the underlying nanometer scale III-nitride graded layers and/or periodic structures.

16. The method of claim 15 wherein in c) and e), the graded aluminum gallium nitride layer of c) consists of continuously varying compositions of AlGaN from a starting AlGaN composition to the terminal semi-polar group III-nitride layer of e), the terminal semi-polar group III-nitride layer being of an AlGaN composition wherein variation of AlGaN composition is followed by the ammonia flow variation and growth temperature variation.

17. The method of claim 16 wherein the starting Al x Ga 1-x N composition is at x=1 deposited at any temperature ranging from 400 to 1300 degrees Celsius.

18. The method of claim 16 wherein the terminal semi-polar group III-nitride layer is of a GaN composition deposited at a reduced growth rate, yielding reduction in surface roughness, macroscopic defect density, and/or micro-structural defect densities.

19. A semi-polar gallium nitride template grown on a sapphire substrate via the method of claim 15 wherein a transition to GaN from AlN involves a linear composition change as a function of thickness over a region thickness of 200 nm.

20. A method of producing a terminal semi-polar group III-nitride layer on a dissimilar substrate with nanometer scale control of semi-polar AlGaN and GaN growth rates, the method comprising:
a) Selecting a suitable substrate from the group consisting of sapphire, silicon carbide, magnesium aluminate spinel, lithium aluminate, silicon, silica glass, gallium nitride, aluminum nitride, or alloys thereof;
b) Growing an aluminum nitride nucleation layer on the substrate at any temperature ranging from 400 to 1300 degrees Celsius, and any thickness from 0.1 nm to 1000 μm;
c) Growing a stepped or graded aluminum gallium nitride layer that involves a transition from an initial group III-nitride composition to a terminal group III-nitride composition over a total thickness ranging from approximately 5 nm to approximately 10 μm, wherein a composition of a first portion of the stepped or graded aluminum gallium nitride layer is varied continuously, and a composition of a second portion of the stepped or graded aluminum gallium nitride layer is varied stepwise;
d) Growing of a periodic epi-structure consisting of alternating layers of group III-nitrides of dissimilar compositions at alternating precursor flows and alternating temperatures;
e) Growing the terminal semi-polar group III-nitride layer upon the underlying nanome

Assignees

• Ostendo Technologies Inc

Inventors

• Soukhoveev Vitali
• Ivantsov Vladimir
• Haskell Benjamin A
• El-Ghoroury Hussein S
• Syrkin Alexander

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3254

  Graded layers · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3216

  Nitrides · CPC title