Method of manufacturing hollow-structure metal grating

Patent metadata

Field	Value
Publication number	US-9442229-B2
Application number	US-201414262808-A
Country	US
Kind code	B2
Filing date	Apr 28, 2014
Priority date	Sep 22, 2013
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

A method for making a hollow-structure metal grating is provided. The method includes the following steps. First, a substrate is provided. Second, a metal layer is located on a surface of the substrate. Third, a patterned mask layer is formed on a surface of the metal layer. The patterned mask layer is made of a chemical amplified photoresist. Fourth, the surface of the metal layer exposed out of the patterned mask layer is plasma etched. Lastly, the patterned mask layer on the surface of the metal layer is dissolved.

First claim

What is claimed is:

1. A method of manufacturing a hollow-structure metal grating, the method comprising:
S 10 , providing a substrate having a top surface;
S 20 , applying a metal layer on the top surface of the substrate, wherein the whole metal layer is directly attached to the top surface of the substrate;
S 30 , forming a patterned mask layer on a surface of the metal layer, wherein the patterned mask layer is made of a chemical amplified photoresist;
S 40 , plasma etching part of the surface of the metal layer exposed out of the patterned mask layer; and
S 50 , dissolving the patterned mask layer on the surface of the metal layer.

2. The manufacturing method of claim 1 , wherein in step S 10 , the material of the substrate is gallium nitride (GaN), gallium arsenide (GaAs), sapphire, aluminum oxide, magnesium oxide, silicon, silica, silicon nitride, or silicon carbide.

3. The manufacturing method of claim 1 , wherein in step S 20 , the metal layer is formed on the top surface of the substrate via electron beam evaporation or ion beam sputtering.

4. The manufacturing method of claim 3 , wherein the metal layer is made of gold, silver, copper, or aluminum.

5. The manufacturing method of claim 3 , wherein a thickness of the metal layer is in a range from about 20 nanometers to about 200 nanometers.

6. The manufacturing method of claim 1 , wherein in step S 30 , parts of the metal layer are exposed out of the patterned mask layer.

7. The manufacturing method of claim 6 , wherein the chemical amplified photoresist is ZEP520, PMMA, PS, JEP-520, SAL601 or ARZ720.

8. The manufacturing method of claim 1 , wherein the step S 30 comprises:
S 31 , forming a first resist layer and then a second resist layer on the surface of the metal layer;
S 32 , providing a master stamp with a first nanopattern defined therein;
S 33 , pressing the first nanopattern of the master stamp into the second resist layer to form a second nanopattern;
S 34 , etching the second resist layer to expose part of the first resist layer out of the second nanopattern;
S 35 , etching the part of the first resist layer exposed out of the second nanopattern to expose part of the metal layer; and
S 36 , removing a remaining material of the second resist layer, to obtain the patterned mask layer located on the surface of the metal layer.

9. The manufacturing method of claim 8 , wherein in step S 31 , the first resist layer is firstly formed on the surface of the metal layer, and the second resist layer is formed on a surface of the first resist layer.

10. The manufacturing method of claim 8 , wherein the master stamp is made of silica, and the first nanopattern comprises a plurality of first ribs and a plurality of first grooves.

11. The manufacturing method of claim 8 , wherein the first resist layer is made of a same material as the patterned mask layer, and the second resist layer is a layer of HSQ or SOG.

12. The manufacturing method of claim 8 , wherein the second nanopattern of the second resist layer comprises a plurality of second ribs and a plurality of second grooves, the plurality of second ribs correspond to the plurality of first grooves, and the plurality of second grooves correspond to the plurality of first ribs.

13. The manufacturing method of claim 1 , wherein the patterned mask layer comprises a plurality of first protruding structures and a plurality of first cavities arranged in intervals.

14. The manufacturing method of claim 13 , wherein in step S 40 , a sub-metal layer is formed on a side of each of the a plurality of first protruding structures, and parts of the substrate between the sub-metal layers of adjacent first protruding structures are exposed.

15. The manufacturing method of claim 14 , wherein in step S 50 , the first protrusions expand and push the sub-metal layers tipping up, and the two sub-metal layers between adjacent two first protrusions connect to form the hollow-structure metal grating.

16. A method of manufacturing a hollow-structure metal grating, the method comprising:
S 10 , providing a substrate having a top surface;
S 20 , applying a metal layer on the top surface of the substrate, wherein the whole metal layer is directly attached to the top surface of the substrate;
S 30 , forming a patterned mask layer on a surface of the metal layer, wherein the patterned mask layer is made of a chemical amplified photoresist, and parts of the metal layer are exposed out of the patterned mask layer;
S 40 , plasma etching part of the surface of the metal layer exposed out of the patterned mask layer to form a plurality of sub-metal layers dispersed in the patterned mask layer, the plurality of sub-metal layers are substantially perpendicular to the substrate, and the parts of the substrate between the adjacent sub-metal layers are exposed; and
S 50 , dissolving the patterned mask layer on the surface of the metal layer to expand and push the sub-metal layers tipping upwards, and to connect adjacent sub-metal layers.

17. The manufacturing method of claim 16 , wherein the metal layer can be made of gold, silver, copper, or aluminum.

18. The manufacturing method of claim 17 , wherein a thickness of the metal layer is in a range from about 20 nanometers to about 200 nanometers.

19. The manufacturing method of claim 16 , wherein the chemical amplified photoresist is ZEP520, PMMA, PS, JEP-520, SAL601 or ARZ720.

20. The manufacturing method of claim 16 , wherein in step S 50 , a space is defined between the connected adjacent sub-metal layers and the substrate.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhu zhen-dong
• Li Qun-Qing
• Bai Ben-Feng
• Fan Shou-Shan

Classifications

• G02B5/1857 Primary

  using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title