Etching method, etching apparatus, and ring member

Patent metadata

Field	Value
Publication number	US-9441292-B2
Application number	US-201514596619-A
Country	US
Kind code	B2
Filing date	Jan 14, 2015
Priority date	Jan 22, 2010
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

First claim

What is claimed is:

1. A method of dry-etching an etching target film formed on a first substrate, comprising:
arranging a ring member on a peripheral portion of a mounting table provided in the processing chamber;
loading a second substrate into the processing chamber and mounting the second substrate on the mounting table such that the ring member disposed on the peripheral portion of the mounting table surrounds the second substrate;
generating plasma of a first gas on a surface of the second substrate and a surface of the ring member to thereby form, on the surface of the second substrate and the surface of the ring member, a film having a main component identical to that of the etching target film formed on the first substrate;
unloading the second substrate from the processing chamber;
loading the first substrate into the processing chamber and mounting the first substrate on the mounting table such that the ring member disposed on the peripheral portion of the mounting table surrounds the first substrate; and
generating a plasma of a second gas to thereby dry-etch the etching target film formed on the first substrate in a state where the main component of the film formed on the ring member is identical to that of the etching target film formed on the first substrate,
wherein the etching target film formed on the first substrate is one of a metal, a metal nitride, and a metal oxide, and the film formed on the ring member is identical to the etching target film.

Assignees

• Tokyo Electron Ltd

Inventors

• Suzuki Ayuta
• Kang Songyun
• Moriya Tsuyoshi
• Terasawa Nobutoshi
• Okabe Yoshiaki

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title