Silicon nitride substrate and method for producing silicon nitride substrate
US-9655237-B2 · May 16, 2017 · US
Silicon nitride sintered body and wear resistant member using the same
US9440887B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9440887-B2 |
| Application number | US-201314438756-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2013 |
| Priority date | Oct 30, 2012 |
| Publication date | Sep 13, 2016 |
| Grant date | Sep 13, 2016 |
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Abstract
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The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 μm×100 μm unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 μm×100 μm unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.
First claim
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The invention claimed is: 1. A wear resistant member composed of a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 μm×100 μm unit area of 15 to 35% when an arbitrary cross section thereof is photographed, wherein a total area ratio of the silicon nitride crystalline particle having a major axis L of 1 μm or more in a 100 μm×100 μm u…
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Mechanical Engineering · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US9440887B2 cover?
- The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 μm×100 μm unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase p…
- Who is the assignee on this patent?
- Toshiba Kk, Toshiba Materials Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C04B35/587. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).