Front contact solar cell with formed electrically conducting layers on the front side and backside

Patent metadata

Field	Value
Publication number	US-9437755-B2
Application number	US-201213483941-A
Country	US
Kind code	B2
Filing date	May 30, 2012
Priority date	Jul 1, 2008
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

First claim

What is claimed is:

1. A solar cell comprising:
a first layer of doped polysilicon formed over a back surface of a substrate, the first layer of doped polysilicon forming a backside junction with the substrate;
a second layer of doped polysilicon formed over a front surface of the substrate, the second layer of doped polysilicon making an electrical connection to the substrate;
a first dielectric layer between the first layer of doped polysilicon and the back surface of the substrate;
a second dielectric layer between the second layer of doped polysilicon and the front surface of the substrate;
a first metal contact making an electrical connection to the first layer of doped polysilicon on a backside of the solar cell;
a second metal contact making an electrical connection to the second layer of doped polysilicon on a front side of the solar cell, the first metal contact and the second metal contact being configured to allow an external electrical circuit to be powered by the solar cell; and
a third dielectric layer formed over the first layer of doped polysilicon.

2. The solar cell of claim 1 further comprising an antireflective layer over the front surface of the substrate.

3. The solar cell of claim 2 wherein the antireflective layer comprises silicon nitride.

4. The solar cell of claim 1 wherein the substrate comprises an N-type silicon substrate, the first layer of doped polysilicon comprises a P-type doped polysilicon, and the second layer of doped polysilicon comprises an N-type doped polysilicon.

5. The solar cell of claim 1 wherein the first dielectric layer comprises silicon dioxide.

6. The solar cell of claim 1 wherein the first dielectric layer is formed to a thickness between 10 and 50 Angstroms.

7. The solar cell of claim 1 wherein the first metal contact forms an infrared reflecting layer with the first dielectric layer on the backside of the solar cell.

8. The solar cell of claim 7 wherein the first metal contact comprises aluminum and the first dielectric comprises silicon dioxide.

Assignees

• Cousins Peter John
• Sunpower Corp

Inventors

• Cousins Peter John

Classifications

• Y02E10/52

  PV systems with concentrators · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• Y02E10/546

  Polycrystalline silicon PV cells · CPC title

• H10F77/1642

  including only Group IV materials · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title