Production and distribution of dilute species in semiconducting materials

Patent metadata

Field	Value
Publication number	US-9437692-B2
Application number	US-201314063819-A
Country	US
Kind code	B2
Filing date	Oct 25, 2013
Priority date	Oct 25, 2012
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.

First claim

The invention claimed is:

1. A method of producing a material, the method comprising:
receiving a tertiary semiconductor (tSC) sample with a dilute species, wherein the tSC sample has two ends, a first end of the tSC sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in a second end of the tSC sample; and
heating the tSC sample in a chamber, wherein the chamber has a first zone and a second zone, the first zone having a first temperature higher than a second temperature in the second zone, and the tSC sample is orientated such that the first end is in the first zone and the second end is in the second zone.

2. The method of claim 1 , wherein:
the tertiary semiconductor sample includes Cd, Zn, and a group VI element; and Zn is the dilute species.

3. The method of claim 2 , wherein the group VI element is Te or Se.

4. The method of claim 1 , wherein a difference in temperature between the first zone and the second zone creates a temperature gradient along the tSC sample and a difference in temperature between the first zone and the second zone is about 50° C.

5. The method of claim 4 , wherein the temperature gradient is about 10° C./cm at an average temperature of about 750° C.; and the method further comprises heating the tSC sample for about 140 hours.

6. The method of claim 1 , where the method further comprises, prior to receiving the tSC sample:
placing a source material in an ampoule, where the source material includes Cd, Zn and Te;
placing the ampoule into a third zone of the chamber, wherein the third zone has a temperature effective to melt the source material to produce melted source material;
moving the ampoule into a fourth zone of the chamber, wherein the fourth zone has a temperature effective to solidify the melted source material to produce solidified source material; and
moving the ampoule into a fifth zone of the chamber, wherein the fifth zone has a temperature effective to crystallize the solidified source material and form the tertiary semiconductor sample with the dilute species.

7. The method of claim 1 , wherein after heating, a difference between a concentration of the dilute species in the first end of the tSC sample and a concentration of the dilute species in the second end of the sample does not exceed 2%.

8. The method of claim 1 , further comprising cooling the tSC sample to about 20° C. at a rate of 10-30° C./h.

9. A material produced by the process of:
receiving a tertiary semiconductor (tSC) sample with a dilute species, wherein the tSC sample has two ends, a first end of the tSC sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in a second end of the tSC sample; and
heating the tSC sample in a chamber, wherein the chamber has a first zone and a second zone, the first zone having a first temperature higher than a second temperature in the second zone, and the tSC sample is orientated such that the first end is in the first zone and the second end is in the second zone.

10. The material of claim 9 , wherein:
the tSC sample includes Cd, Zn, and a group VI element; and
Zn is the dilute species.

11. The material of claim 10 , wherein the group VI element is Te or Se.

12. The material of claim 9 , wherein a difference in temperature between the first zone and the second zone creates a temperature gradient along the tSC sample and the difference in temperature between the first zone and the second zone is about 50° C., the temperature gradient is about 10° C./cm at an average temperature of about 750° C., and the process further comprises heating the tSC sample for about 140 hours.

13. The material of claim 9 , further comprising cooling the tSC sample to about 20° C. at a rate of 10-30° C./h.

Assignees

• Brookhaven Science Ass Llc

Inventors

• James Ralph B
• Camarda Giuseppe
• Bolotnikov Aleksey E
• Hossain Anwar
• Yang Ge
• Kim Kihyun

Classifications

• C30B11/00

  Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) · CPC title

• C30B29/48 Primary

  AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} · CPC title

• C30B1/10

  by solid state reactions or multi-phase diffusion · CPC title

• H10D62/60 Primary

  Impurity distributions or concentrations · CPC title

• H01L29/36 Primary

  Electricity · mapped topic