Semiconductor memory device

Patent metadata

Field	Value
Publication number	US-9437656-B2
Application number	US-201414515205-A
Country	US
Kind code	B2
Filing date	Oct 15, 2014
Priority date	Mar 24, 2010
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes.

First claim

What is claimed is:

1. A semiconductor memory device, comprising:
a first, a second, a third and a fourth bit line extending in a first direction;
a first, a second, a third and a fourth electrode arranged in a second direction intersecting the first direction;
a fifth electrode extending in the second direction;
a first dielectric film having a first surface and a second surface being opposite to the first surface, the first, second, third and fourth electrodes provided to…

Assignees

• Toshiba Kk

Inventors

• Fukuzumi Yoshiaki
• Aochi Hideaki

Classifications

• H10W20/49

  Electricity · mapped topic

• H10W20/43

  Electricity · mapped topic

• G11C13/0007 Primary

  Physics · mapped topic

• G11C2213/73

  Physics · mapped topic

• G11C16/04

  Physics · mapped topic