Method of forming a fine pattern by using block copolymers

Patent metadata

Field	Value
Publication number	US-9437452-B2
Application number	US-201514604123-A
Country	US
Kind code	B2
Filing date	Jan 23, 2015
Priority date	Feb 27, 2014
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.

First claim

What is claimed is:

1. A method of forming a fine pattern, the method comprising:
forming a phase separation guide layer on a substrate;
forming a neutral layer on the phase separation guide layer;
forming a first pattern on the neutral layer, the first pattern including a plurality of first openings;
forming a second pattern including a plurality of second openings by changing the first pattern, each of the plurality of second openings having a smaller width than each of the plurality of first openings;
forming a neutral pattern by etching an exposed portion of the neutral layer using the second pattern as an etch mask, the neutral pattern including a plurality of guide patterns exposing a portion of the phase separation guide layer;
removing the second pattern to expose a top surface of the neutral pattern;
forming a material layer on the neutral pattern and the phase separation guide layer exposed through the plurality of guide patterns, the material layer including a block copolymer; and
forming a fine pattern layer on the neutral pattern and the phase separation guide layer, the fine pattern layer including a first block and a second block;
wherein each of the plurality of second openings of the second pattern has a width that is equal to about half the width of any one of the first openings of the first pattern.

2. The method of claim 1 , wherein the forming of the second pattern comprises: coating a property changing layer on the first pattern; heat-treating the first pattern coated with the property changing layer; and removing a property changing layer that remains after the heat-treating.

3. The method of claim 1 , wherein the forming of the second pattern comprises forming a capping layer comprising an acid source on an exposed surface of the first pattern.

4. The method of claim 1 , wherein the plurality of guide patterns of the neutral pattern are of a line type and are repetitively formed at a predetermined pitch in a first direction.

5. The method of claim 4 , wherein when a width of each of the plurality of guide patterns in a predetermined direction is X, a width Y of the neutral pattern in the predetermined direction is (2n+1)X, where n is a positive integer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jeong-Ju
• Kim Hyoung-Hee
• Kim Kyoung-Mi
• Baek Se-Kyung
• Lee Soo-Jin
• Kim Jae-Ho
• Choi Jung-Sik

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title